Tunable near white light photoluminescence of lanthanide ion (Dy3+, Eu3+and Tb3+) doped DNA lattices

Dugasani, Sreekantha Reddy; Park, Byeongho; Gnapareddy, Bramaramba; Pamanji, Sreedhara Reddy; Yoo, Sanghyun; Lee, Keun Woo; Lee, Seok; Jun, Seong Chan; Kim, Jae‐Hun; Kim, Chulki; Park, Sungha

doi:10.1039/c5ra07360j

Cited by 19 publications

(20 citation statements)

References 31 publications

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“…It is known that the emission spectrum of the nucleic acid bases (adenine, guanine, cytosine, thymine, uracil) is in the range of 400–600 nm, which indicates that the major contribution to the DNA PL spectrum are caused by these bases [ 48 ]. The homogeneous and specific bindings to DNA against intercalation between base-pairs and binding on phosphate backbones lead to the enhancing of the intensity of the PL [ 52 ].…”

Section: Resultsmentioning

confidence: 99%

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

2016

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Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

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Section: Resultsmentioning

confidence: 99%

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

2016

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“…Interestingly, phase changes of the DX-DNA nanostructures from crystalline to amorphous occurred above a certain ion concentration (referred to as the optimum concentration, i.e., [M 2+ ] O,S or [Ln 3+ ] O,S , where S stands for single-ion doping), and extrema values of the physical quantities (e.g., maximum current at [M 2+ ] O,S and minimum absorbance at [Ln 3+ ] O,S ) were obtained at [M 2+ ] O,S or [Ln 3+ ] O,S . The measured [Co 2+ ] O,S , [Cu 2+ ] O,S , [Tb 3+ ] O,S , and [Eu 3+ ] O,S were 1.0, 6.0, 1.0, and 1.0 mM, respectively 22−24 (the yellow dots in Figure 2 indicate [Co 2+ ] O,S , [Cu 2+ ] O,S , [Tb 3+ ] O,S , and [Eu 3+ ] O,S ).…”

Section: Resultsmentioning

confidence: 99%

Metal and Lanthanide Ion-Co-doped Synthetic and Salmon DNA Thin Films

et al. 2019

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Researchers have begun to use DNA molecules as an efficient template for arrangement of multiple functionalized nanomaterials for specific target applications. In this research, we demonstrated a simple process to co-dope synthetic DNA nanostructures (by a substrate-assisted growth method) and natural salmon DNA thin films (by a drop-casting method) with divalent metal ions (M 2+ , e.g., Co 2+ and Cu 2+ ) and trivalent lanthanide ions (Ln 3+ , e.g., Tb 3+ and Eu 3+ ). To identify the relationship among the DNA and dopant ions, DNA nanostructures were constructed while varying the Ln 3+ concentration ([Ln 3+ ]) at a fixed [M 2+ ] with ion combinations of Co 2+ –Tb 3+ , Co 2+ –Eu 3+ , Cu 2+ –Tb 3+ , and Cu 2+ –Eu 3+ . Accordingly, we were able to estimate the critical [Ln 3+ ] (named the optimum [Ln 3+ ], [Ln 3+ ] O ) at a given [M 2+ ] in the DNA nanostructures that corresponds to the phase change of the DNA nanostructures from crystalline to amorphous. The phase of the DNA nanostructures stayed crystalline up to [Tb 3+ ] O ≡ 0.4 mM and [Eu 3+ ] O ≡ 0.4 mM for Co 2+ ([Tb 3+ ] O ≡ 0.6 mM and [Eu 3+ ] O ≡ 0.6 mM for Cu 2+ ) and then changed to amorphous above 0.4 mM (0.6 mM). Consequently, phase diagrams of the four combinations of dopant ion pairs were created by analyzing the DNA lattice phases at given [M 2+ ] and [Ln 3+ ]. Interestingly, we observed extrema values of the measured physical quantities of DNA thin films near [Ln 3+ ] O , where the maximum current, photoluminescence peak intensity, and minimum absorbance were obtained. M 2+ - and Ln 3+ -multidoped DNA nanostructures and DNA thin films may be utilized in the development of useful optoelectronic devices or sensors because of enhancement and contribution of multiple functionalities provided by M 2+ and Ln 3+ .

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“…Compared to single doping, multiple Ln 3+ -doping (e.g., double and triple) into DNA facilitates the provision of functionality with intrinsic characteristics, tunability by different combinations, and variety in applications. In a previous study, we explored DNA complexes doped with single Ln 3+ (terbium (Tb 3+ ), europium (Eu 3+ ), or thulium (Tm 3+ )), investigated the structural stabilities of DX DNA lattices controlled by [Ln 3+ ], and developed a simple method for identifying [Ln 3+ ] O in DNA complexes . Although we expected different [Ln 3+ ] O with different ions, structural phase transitions of DX DNA lattices with single Ln 3+ revealed optimum concentrations at slightly above 1 mM for all Ln 3+ , meaning that 1 mM applied to [Tb 3+ ] O , [Eu 3+ ] O , as well as [Tm 3+ ] O (up to this concentration, crystalline lattices were guaranteed).…”

Section: Resultsmentioning

confidence: 99%

Morphological and Optoelectronic Characteristics of Double and Triple Lanthanide Ion-Doped DNA Thin Films

Kesama

Dugasani

Yoo

et al. 2016

ACS Appl. Mater. Interfaces

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Double and triple lanthanide ion (Ln(3+))-doped synthetic double crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films are fabricated by the substrate assisted growth and drop-casting methods on given substrates. We employed three combinations of double Ln(3+)-dopant pairs (Tb(3+)-Tm(3+), Tb(3+)-Eu(3+), and Tm(3+)-Eu(3+)) and a triple Ln(3+)-dopant pair (Tb(3+)-Tm(3+)-Eu(3+)) with different types of Ln(3+), (i.e., Tb(3+) chosen for green emission, Tm(3+) for blue, and Eu(3+) for red), as well as various concentrations of Ln(3+) for enhancement of specific functionalities. We estimate the optimum concentration of Ln(3+) ([Ln(3+)]O) wherein the phase transition of Ln(3+)-doped DX DNA lattices occurs from crystalline to amorphous. The phase change of DX DNA lattices at [Ln(3+)]O and a phase diagram controlled by combinations of [Ln(3+)] were verified by atomic force microscope measurement. We also developed a theoretical method to obtain a phase diagram by identifying a simple relationship between [Ln(3+)] and [Ln(3+)]O that in practice was found to be in agreement with experimental results. Finally, we address significance of physical characteristics-current for evaluating [Ln(3+)]O, absorption for understanding the modes of Ln(3+) binding, and photoluminescence for studying energy transfer mechanisms-of double and triple Ln(3+)-doped SDNA thin films. Current and photoluminescence in the visible region increased as the varying [Ln(3+)] increased up to a certain [Ln(3+)]O, then decreased with further increases in [Ln(3+)]. In contrast, the absorbance peak intensity at 260 nm showed the opposite trend, as compared with current and photoluminescence behaviors as a function of varying [Ln(3+)]. A DNA thin film with varying combinations of [Ln(3+)] might provide immense potential for the development of efficient devices or sensors with increasingly complex functionality.

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Tunable near white light photoluminescence of lanthanide ion (Dy³⁺, Eu³⁺and Tb³⁺) doped DNA lattices

Cited by 19 publications

References 31 publications

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

Metal and Lanthanide Ion-Co-doped Synthetic and Salmon DNA Thin Films

Morphological and Optoelectronic Characteristics of Double and Triple Lanthanide Ion-Doped DNA Thin Films

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