Thin films of semiconductors, metals and insulators are key elements in modern technological applications such as information processing, storage and solar cells. Among the variety of thin-film production techniques, chemical vapor deposition (CVD) is the ubiquitous technique employed by industry to produce thin films. In CVD, vapors of chemical compounds called precursors are thermally and chemically reacted on a desired surface to produce a solid film. Combinatorial CVD [1][2][3][4] and selective-area CVD [5][6][7][8] are subdivisions of CVD that have attracted significant interest in recent years. Efficient discovery and optimization of interesting thin films can be achieved using spatially addressable combinatorial CVD processes. [2,3] On the other hand, interest in the growth of nanostructures [5][6][7][8] or the position-controlled growth of nanowires and carbon nanotubes [7] has driven efforts toward the area-selective decomposition of precursor molecules on the surface using either energy beams (electron, [5,9] ion, [6] or laser [7] beam) or selective optothermal heating of metallic nanostructures on the surface due to plasmonic effects.[8] The nano-tunability [9] and potential for low-temperature growth of nanostructures over flexible substrates [7,10] are among the key drivers to follow selective-area CVD. Despite the large amount of research on the above-mentioned topics there is a lack of fundamental understanding of the CVD process relating to the establishment of which conditions are optimal for either of the above-mentioned applications. Herein, we present a systematic kinetic study for monomeric Nb(OEt) 4 (dmae), [11] used in niobium oxide deposition, [2,12] to identify the conditions that are ideal for selective-area and spatially addressable combinatorial CVD. This study has led us to discover a novel CVD regime in which the film-growth rate is a decreasing function of the precursor flux. Our results conceptually address a solution to achieve high spatial resolution in laser-assisted CVD (LACVD)-an issue that currently hinders the possibilities of sub-micrometer patterning in LACVD.[13]We performed our experiments in a high-vacuum CVD (HVCVD) system in which the gas-phase collision of precursor molecules is minimized. In this system, thin films form solely through thermal decomposition and hydrolysis of Nb(OEt) 4 (dmae) molecules adsorbed on the substrate surface described by the following generally accepted reactions [Eqs (1) and (2)] for transition-metal alkoxides, [14] where the asterisks (*) designate the surface species:The dimethylamino end-group functionalization of one of the five ehoxy ligands acts as an octahedral ligand field completing entity to keep the precursor molecule monomolecular; its influence on the decomposition path is neglected here.A schematic illustration of the linear gradient distribution of precursor molecules on the wafer surface along with the photographs of the samples deposited at temperatures from 320 to 650 8C is shown in Figure 1. A nearly linear precursor im...