Tunable MEMS hybrid coupler and L-band tunable filter

Nishino, Tamotsu; Kitsukawa, Yusuke; Hangai, Masatake; Lee, Sang-seok; Soda, Shinnosuke; Miyazaki, Moriyasu; Naitoh, Izuru; Konishi, Yoshihiko

doi:10.1109/mwsym.2009.5165879

Cited by 11 publications

(3 citation statements)

References 6 publications

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“…For example, see Ref. [ 10 ], where the insertion loss is 5.2 dB and the physical size is 5.2 × 12.3 mm 2 . However, the stability of their dynamic range and capability of power handling needs to be improved [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

et al. 2022

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In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an integrated passive device (IPD) technology. We introduced air-bridge structures into the outer metal wire to improve the capacitance per unit volume while utilizing a miniaturized chip with dimensions 1538 μm × 800 μm (0.029 λ0 × 0.015 λ0) for the BPF. The pattern was designed and optimized by simulating different dimensional parameters, and the group delay and current density are presented. The equivalent circuit was modeled to analysis various parasitic effect. Additionally, we described the GaAs-based micro-nano scale fabrication process to elucidate the proposed IPD technology and the physical structure of the BPF. Measurements were conducted with a center frequency of 1.53 GHz (insertion loss of 0.53 dB) and a 3-dB fractional bandwidth (FBW) of 70.59%. The transmission zero was located at 4.16 GHz with restraint of 35.86 dB. Owing to the benefits from its miniaturized chip size and high performance, the proposed GaAs-based IPD BPF was verified as an excellent device for various S-band applications, such as satellite communication, keyless vehicle locks, wireless headphones, and radar.

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Section: Introductionmentioning

confidence: 99%

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

et al. 2022

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“…Thereafter, switching units ranging from single pole double throws (SPDTs) [10] to more complex single pole multiple throws (SPMTs) and switching matrices were successfully demonstrated in the literature [11]. Reconfigurable RF power attenuators [12] and splitter/couplers [13] can also be completely implemented using RF-MEMS technology, as can impedance matching tuners covering significant portions of the Smith chart [14][15][16]. Furthermore, RF-MEMS technology has also proven to be a key enabling solution in the realisation of reconfigurable phase shifters [17] and true time delay (TTD) lines [18] for electronic antenna steering and radar systems, as well as in the micro-fabrication of tuneable filters [19] for various RF applications [20,21].…”

Section: Introductionmentioning

confidence: 99%

RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

Iannacci

Tschoban

2017

J. Micromech. Microeng.

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RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from −10 dB to −60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3–5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed.

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“…With the possibility of significantly reducing the complexity and overall size of modern wireless communication system, the development of various types of reconfigurable or tunable filters has attracted researchers' attention in the past few years. The tuning of the center frequency has been frequently mentioned and many methods have been proposed [1–17]. Such a tuning capability enables one filter working at several different frequency bands, and hence, saves the overall system size and cost.…”

Section: Introductionmentioning

confidence: 99%

Microwave bandpass filters with tunable center frequencies and reconfigurable transmission zeros

Zhou

Mandal

Zhang

2013

Micro & Optical Tech Letters

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This article presents the design of a microwave bandpass filter with tunable center frequencies and reconfigurable transmission zeros. The tuning of the center frequencies is realized by loading varactors at the ends of the λ/2 resonator. The reconfiguration of transmission zero is implemented through varactors in combination with tapped λ/4 stubs. The equivalent circuit models of the tunable filters are provided. The transmission zeros can be set to be at the lower side, the upper side, or both sides of the passband. The design concept is demonstrated by measurement results for both one transmission zero case and two transmission zeros case. The tuning frequency ranges are 680–890 MHz and 680–1020 MHz for one zero case and two zeros case, respectively. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1526–1531, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27628

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Tunable MEMS hybrid coupler and L-band tunable filter

Cited by 11 publications

References 6 publications

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

Microwave bandpass filters with tunable center frequencies and reconfigurable transmission zeros

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