Tunable Magnetoresistance in InAs/Ferromagnet Hybrid Devices

Meier, Guido; Pels, C.; Schierholz, C.; Steiner, M.; Matsuyama, T.

doi:10.1080/0141159021000051343

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…Details of the deposition process are described elsewhere. 17,18 The composition of the thin-film alloy Ni 83 Fe 17 is analyzed by energy-dispersive x-ray analysis. The completed sample includes microstructures with five different thicknesses deposited in a single process and the repeatedly sputtered microstructures consisting of two, respectively, three layers with another five different thicknesses.…”

Section: Introductionmentioning

confidence: 99%

Stray fields of domains in permalloy microstructures—Measurements and simulations

Barthelmeß

Pels

Thieme

et al. 2004

Journal of Applied Physics

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We have measured the stray fields of thin permalloy (Ni 83 Fe 17 ) microstructures with different geometries and several thicknesses by magnetic-force microscopy ͑MFM͒. The MFM images are compared to corresponding images calculated from micromagnetic simulations. In particular, the type of 180°domain walls is discussed. We observe a transition from cross-tie to asymmetric Bloch walls between 70 and 100 nm film thickness. Good agreement between measurement and simulation is obtained.

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Section: Introductionmentioning

confidence: 99%

Stray fields of domains in permalloy microstructures—Measurements and simulations

Barthelmeß

Pels

Thieme

et al. 2004

Journal of Applied Physics

Self Cite

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Thickness and magnetic-field dependence of domain switching in isolated and interacting permalloy contacts

Pels

Barthelmeß

Bolte

et al. 2005

Journal of Magnetism and Magnetic Materials

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Reversible and irreversible magnetoresistance of quasisingle domain permalloy microstructures

Steiner

Pels

Meier

2004

Journal of Applied Physics

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Permalloy microstructures are investigated by magnetoresistance measurements at 2.0 K and by magnetic-force microscopy at room temperature. While the reversible anisotropic magnetoresistance is determined to be 2.4% at saturation fields of Bsat=1020 mT, the irreversible switching yields a resistance change of the order of 0.05% at 13 mT. By tilting the external magnetic field relative to the easy axis of the quasi single-domain microstructures insight in the reversal process is gained. Comparison with an analytical model provides evidence for magnetization reversal by curling.

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Tunable Magnetoresistance in InAs/Ferromagnet Hybrid Devices

Cited by 3 publications

References 21 publications

Stray fields of domains in permalloy microstructures—Measurements and simulations

Stray fields of domains in permalloy microstructures—Measurements and simulations

Thickness and magnetic-field dependence of domain switching in isolated and interacting permalloy contacts

Reversible and irreversible magnetoresistance of quasisingle domain permalloy microstructures

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