“… - Employment of floating passive elements [3, 7, 9, 12, 14, 16–23, 25–29, 31–35, 37–42, 47–49, 52].
- Use of a large number of metal‐oxide semiconductor (MOS) transistors (18 or more) [9, 11–15, 18, 20,23, 24, 28–30, 35–45, 47–50, 52, 53].
- Need for matched values of components/parameters [3, 7, 9, 11, 12, 14, 17, 18, 20–23, 25–28, 31, 34, 40–42, 46–48].
…”