Tunable Light Emission from Quantum-Confined Excitons in TiSi<sub>2</sub>-Catalyzed Silicon Nanowires

Guichard, A.R.; Barsic, David N.; Sharma, Shashank; Kamins, Theodore I.; Brongersma, Mark L.

doi:10.1021/nl061287m

Cited by 108 publications

(81 citation statements)

References 30 publications

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“…7,18 While bulk Si has an indirect band gap, 19 Si NWs usually have a direct band gap, which enables usage as optically active materials for photonics applications. 20,21 Since the current-voltage (I -V ) characteristics are important in circuits design, the transport properties of Si NWs have been widely reported within both theoretical and experimental frameworks. For a system that uses Li electrodes to connect the NW, applying the nonequilibrium Green's function method, the I -V characteristics have been studied as function of the NW geometry 17,22 and surface modifications created by atomic substitutions and vacancies.…”

Section: Introductionmentioning

confidence: 99%

Structural and tunneling properties of Si nanowires

et al. 2013

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We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the 110 direction showing the smallest decay with length and the largest conductance and current.

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Section: Introductionmentioning

confidence: 99%

Structural and tunneling properties of Si nanowires

et al. 2013

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“…Semiconductor nanowires are of high interest as potential building blocks for future optical and electronic devices, such as high mobility transistors, bright LEDs and solar cells [1][2][3][4][5]. Avoiding the use of external catalysts such as gold as a seed for nucleation and growth of the nanowires has been and is a crucial issue.…”

Section: Introductionmentioning

confidence: 99%

Catalyst-free nanowires with axial In_xGa_1−xAs/GaAs heterostructures

et al. 2009

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Self-catalyzed growth of axial In x Ga 1−x As/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed the dependence of the alloy concentration on the growth conditions and present a simple model for the growth. The heterostructures grown with the method presented were spatially mapped along the wires with confocal microphotoluminescence and cathodoluminescence. It was found as expected that the emission of GaAs/In x Ga 1−x As/GaAs heterostructures is localized. This work is important for the use of an external catalyst-free growth of complex axial heterostructures and related opto-electronic devices that facilitates its possible integration in the device or system fabrication processes.

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“…Designing, etching, and manipulating silicon nanowires has become increasingly important to a variety of research areas including nanoelectromechanical systems, optics/plasmonics, 1 and nanoscale circuit elements. Specific applications include high surface area chemical sensors, 2 mechanical oscillators, 3,4 and piezoresistive sensors.…”

Section: Introductionmentioning

confidence: 99%

Controllable deformation of silicon nanowires with strain up to 24%

Walavalkar

Homyk

Henry

et al. 2010

Journal of Applied Physics

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Fabricated silicon nanostructures demonstrate mechanical properties unlike their macroscopic counterparts. Here we use a force mediating polymer to controllably and reversibly deform silicon nanowires. This technique is demonstrated on multiple nanowire configurations, which undergo deformation without noticeable macroscopic damage after the polymer is removed. Calculations estimate a maximum of nearly 24% strain induced in 30 nm diameter pillars. The use of an electron activated polymer allows retention of the strained configuration without any external input. As a further illustration of this technique, we demonstrate nanoscale tweezing by capturing 300 nm alumina beads using circular arrays of these silicon nanowires.

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Tunable Light Emission from Quantum-Confined Excitons in TiSi₂-Catalyzed Silicon Nanowires

Cited by 108 publications

References 30 publications

Structural and tunneling properties of Si nanowires

Structural and tunneling properties of Si nanowires

Catalyst-free nanowires with axial In_xGa_1−xAs/GaAs heterostructures

Controllable deformation of silicon nanowires with strain up to 24%

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Tunable Light Emission from Quantum-Confined Excitons in TiSi2-Catalyzed Silicon Nanowires

Cited by 108 publications

References 30 publications

Structural and tunneling properties of Si nanowires

Structural and tunneling properties of Si nanowires

Catalyst-free nanowires with axial InxGa1−xAs/GaAs heterostructures

Controllable deformation of silicon nanowires with strain up to 24%

Contact Info

Product

Resources

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Tunable Light Emission from Quantum-Confined Excitons in TiSi₂-Catalyzed Silicon Nanowires

Catalyst-free nanowires with axial In_xGa_1−xAs/GaAs heterostructures