Tunable Graphene–GaSe Dual Heterojunction Device

Kim, Wonjae; Li, Changfeng; Chaves, Ferney A.; Jiménez, David; Rodriguez, Raúl D.; Susoma, Jannatul; Fenner, Matthias A.; Lipsanen, Harri; Riikonen, Juha

doi:10.1002/adma.201504514

Cited by 96 publications

(76 citation statements)

References 46 publications

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“…was reported for GaSe/graphene heterostructure 42,43 . In other words, the GaSe becomes more p doped, as expected for a bulk GaSe 4,11,17,44 , because of the screening effect caused by the presence of additional layers.…”

Section: Resultsmentioning

confidence: 78%

“…Hence, the epitaxial growth of GaSe films seems to be a suitable synthesis method to promote the use of GaSe 9,10 . More interestingly, the possibility of combining semiconducting MX materials with graphene layer can merge the excellent optical properties of these materials with the high mobility of graphene in vdW heterostructures 11,12 . This combination is expected to give rise to novel materials capable of highly responsive photodetectors.…”

Section: Introductionmentioning

confidence: 99%

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Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

et al. 2017

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demonstrate the tunability of the quasiparticle energy gap of few layered gallium selenide (GaSe) directly grown on a bilayer graphene substrate by molecular beam epitaxy (MBE). Our results show that the band gap is about 3.50 ± 0.05 eV for single-tetralayer (1TL), 3.00 ± 0.05 eV for bi-tetralayer (2TL) and 2.30 ± 0.05 eV for tritetralayer (3TL). This band gap evolution of GaSe, in particularly the shift of the valence band with respect to the Fermi level, was confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and our theoretical calculations. Moreover, we observed a charge transfer in GaSe/graphene van der Waals (vdW) heterostructure using ARPES. These findings demonstrate the high impact on the GaSe electronic band structure and electronic properties that can be obtained by the control of 2D materials layer thickness and the graphene induced doping.

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Section: Resultsmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

et al. 2017

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“…Here C ox = ox /T ox and C d = d /d describe the gate and interface layer capacitances per unit area. Finally, the series resistance R is related to the voltage drop across the Schottky juntion according to: [13] working in the Mott limit (strong FLP). We have assumed in our model the parameters reported in Table I, unless otherwise stated.…”

Section: Modelmentioning

confidence: 99%

The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions

Chaves

Jiménez

2016

IEEE Trans. Electron Devices

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Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the modulation of the graphene-semiconductor (GS) Schottky barrier by means of a top gate, and demonstrating an ON-OFF current ratio up to 10 5 . Such a large number is likely due to the realization of an ultra clean interface with virtually no interface trapped charge. However, it is indeed technologically relevant to know the impact that the interface trapped charges might have on the barristor's electrical properties. We have developed a physics based model of the gate tunable GS heterostructure where non-idealities such as Fermi Level Pinning (FLP) and a "bias dependent barrier lowering effect" has been considered. Using the model we have made a comprehensive study of the barristor's expected digital performance.

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“…Because of this merit, Few layered 2DLMCs such as transition metal dichalcogenides (TMDs) (MoS 2 ,26, 27, 28 WS 2 ,29, 30, 31, 32, 33, 34, 35, 36 TiS 3 ,37 etc.) and group III–VI nanomaterials (InSe,38, 39, 40, 41, 42 GaSe,43, 44, 45, 46, 47, 48 etc.) have been extensively investigated in many fields including photodetectors,49, 50, 51, 52, 53, 54, 55, 56, 57, 58 gas sensors,59, 60 field effect transistors (FETs),38, 61, 62, 63, 64, 65 and flexible devices 66, 67, 68…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Tunable Graphene–GaSe Dual Heterojunction Device

Cited by 96 publications

References 46 publications

Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

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