Tunable fabrication and photoluminescence property of SiC nanowires with different microstructures

Shen, Zhouzhou; Chen, Junhong; Li, Bin; Li, Guangqi; Zheng, Haotian; Men, Jiayao; Hou, Xinmei

doi:10.1016/j.apsusc.2019.144979

Cited by 24 publications

(16 citation statements)

References 64 publications

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“…46 The twofold coordinated silicon (-O-Si-O-, -O-Si-C-O-) in the metastable SiO x C y phase can cause the radiative recombination of carriers and nonhomogeneous charge distribution, advancing the self-trapping of electrons and holes. 8,47 The oxygen atoms in the twofold coordinated silicon can form a luminous center level near the valence band. 48 Electrons can transit from the trap level to the luminous center level.…”

Section: Resultsmentioning

confidence: 99%

“…The emission peak located at 382 nm was attributed to SiC near‐band‐edge emission as well as limited quantum confinement effect, a very noticeable blue shift has occurred 46 . The twofold coordinated silicon (‐O‐Si‐O‐, ‐O‐Si‐C‐O‐) in the metastable SiO x C y phase can cause the radiative recombination of carriers and nonhomogeneous charge distribution, advancing the self‐trapping of electrons and holes 8,47 . The oxygen atoms in the twofold coordinated silicon can form a luminous center level near the valence band 48 .…”

Section: Resultsmentioning

confidence: 99%

“…6 SiC NWs may be used as a light-emitting material and device in a high temperature and severe environment from green to ultraviolet due to the wide direct band gap and excellent performance. 7,8 Up to date, many efforts have been devoted to the fabrication of SiC NWs in multiple ways, such as carbothermal reduction, chemical vapor deposition, template growth, pyrolysis of polymeric precursors, sol-gel method, and so on. [9][10][11][12][13][14] Li et al synthesized hexahedral SiC NWs on a graphite paper with carbon felt and SiO 2 by sol-gel and carbothermal reduction, but the synthesized products have high carbon content and low product purity.…”

Section: Introductionmentioning

confidence: 99%

“…However, the indirect band gap of bulk SiC results in weak light emission, which limits its application in light filed 6 . SiC NWs may be used as a light‐emitting material and device in a high temperature and severe environment from green to ultraviolet due to the wide direct band gap and excellent performance 7,8 . Up to date, many efforts have been devoted to the fabrication of SiC NWs in multiple ways, such as carbothermal reduction, chemical vapor deposition, template growth, pyrolysis of polymeric precursors, sol‐gel method, and so on 9‐14 .…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Wei

Wang

et al. 2020

J Am Ceram Soc

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Silicon carbide nanowire (SiC NW), as a typical wide band gap semiconductor was used as light‐emitting materials and devices in high‐temperature and harsh environments due to its excellent properties. In this paper, flexible ultra‐long SiC NWs membrane was successfully synthesized by electrospinning and subsequently high‐temperature sintering using phenolic resin and silica sol as precursors. Results of system characterization reveal that SiC NWs possess a smooth and uniform surface with diameter distribution mainly between 50‐300 nm and a length of more than tens of micrometers, forming a network structure. The growth mechanism of synthesized nanowires was mainly carbothermal reduction in situ and was accompanied by vapor‐solid (V‐S) reaction. The present work provides a simple and cost‐effective way for controllable fabrication of SiC NWs membrane. The photoluminescence spectrum of SiC NWs membrane emerged a clear blue shift, indicating a potential application in optoelectronic devices and discussed the potential applications of SiC NWs membrane in other fields.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Wei

Wang

et al. 2020

J Am Ceram Soc

View full text Add to dashboard Cite

show abstract

“…The PL characteristics are observed to be quite variable, which strongly depends on the morphology (SiO 2 ), size (diameter), structure (defects) 7 – 25 . Shena et al 20 synthesized the SiC/SiO 2 nanowires with emission peak at 408 nm, the SiC/SiO 2 nanowires synthesized by Zhang et al 17 shows emission peak at 438 nm and Shen et al synthesized the SiC/SiO 2 nanowires with emission peak at 401 nm 19 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Chen

Chi

Hsu

et al. 2021

Sci Rep

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In this study, the high-density SiC/SiO2 core–shell nanowires were synthesized on the nickel coated SiO2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO2 nanowires.

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Synthesis and Applications of Borides, Carbides, Phosphides, and Nitrides

Ningthoujam

Joshi

2021

Indian Institute of Metals Series

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Tunable fabrication and photoluminescence property of SiC nanowires with different microstructures

Cited by 24 publications

References 64 publications

Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Synthesis and Applications of Borides, Carbides, Phosphides, and Nitrides

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