Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Abstract

Silicon carbide nanowire (SiC NW), as a typical wide band gap semiconductor was used as light‐emitting materials and devices in high‐temperature and harsh environments due to its excellent properties. In this paper, flexible ultra‐long SiC NWs membrane was successfully synthesized by electrospinning and subsequently high‐temperature sintering using phenolic resin and silica sol as precursors. Results of system characterization reveal that SiC NWs possess a smooth and uniform surface with diameter distribution mainly between 50‐300 nm and a length of more than tens of micrometers, forming a network structure. The growth mechanism of synthesized nanowires was mainly carbothermal reduction in situ and was accompanied by vapor‐solid (V‐S) reaction. The present work provides a simple and cost‐effective way for controllable fabrication of SiC NWs membrane. The photoluminescence spectrum of SiC NWs membrane emerged a clear blue shift, indicating a potential application in optoelectronic devices and discussed the potential applications of SiC NWs membrane in other fields.

Multifunctional ultralight, recoverable, piezoresistive, and super thermal insulating SiC nanowire sponges

“…29−1129). 9 The low intensity peak at around 33.6 • represents the formation of stacking faults (S.F. ), 20 in agreement of TEM images above.…”

“…All these reactions form a cycle and continuously generate abundant interconnected SiCNWs. 9 The resulting SiCNW sponges exhibit an excellent 3D structural integrity, with each layer firmly attached; the boundary of each layer can be hardly recognized in the digital photo of the cross-sectional area (inset of Figure 2B). The SEM images of the cross-sectional area further verify that two adjacent layers are firmly connected by the intertwined nanowires with lengths up to tens of µm, forming a porous open-cell network (Figure 2B-D).…”

“…Moreover, the template-based CVD method requires both template preparation and removal after the deposition process, which considerably reduces the production efficiency. Spinning technique as a common method for the production of 1D nanowires is then considered as an alternative since the preparation of SiCNWs by thermal treatment of electrospun polycarbosilane [6][7][8] or polymer-SiO 2 mixture nanofibers 9,10 has been well established. However, due to the limitation of the spinning technique, electrospun fibers are just loosely accumulated naturally on the collector as random or oriented nanofibers with poor interconnection, which are considered unsuitable for generating large-scale 3D networks with regular shapes.…”

Effects of In Situ Grown SiC on the Microstructure and Anti‐Ablation Performance of C/C–SiC Composites Fabricated by Sol–Gel and Precursor Impregnation and Pyrolysis

“…[18][19][20] By reducing the material cost and simplifying the synthesis process, this precursor has attracted much interest from researchers in related fields. [18,[21][22][23] For instance, Najafi [24] synthesized SiC nanopowders and nanowhiskers using a novel precursor containing phenolic resin and silicon alkoxide. This precursor possessed a low residual C after carbonization, which was beneficial for the formation of pure SiC.…”

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

“…In the nanometer scale, the surface effect, small size effect, quantum size effect and macroscopic tunneling effect dramatically change the physical and chemical properties of materials [ 1 , 2 , 3 , 4 ]. For instance, SiC nanowires, a non-oxide ceramic material, attracted great interest as a highly promising nanomaterial for many industrial applications due to their superior electric and mechanical properties, as well as heat, corrosion, and high temperature oxidation resistance [ 5 , 6 , 7 ]. These unique properties enable SiC nanowires to be used as ideal candidates for nanodevices for sensing and biosensing applications, or in composite materials as a reinforcement [ 8 , 9 , 10 ].…”