Tunable Electroluminescence in Planar Graphene/SiO<sub>2</sub> Memristors

He, Congli; Li, Jiafang; Wu, Xing; Chen, Peng; Zhao, Jing; Yin, Kuibo; Cheng, Meng; Yang, Wei; Xie, Guobo; Wang, Duoming; Liu, Donghua; Yang, Rong; Shi, Dean; Li, Zhiyuan; Sun, Litao; Zhang, Guangyu

doi:10.1002/adma.201302447

Cited by 73 publications

(61 citation statements)

References 35 publications

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“…The RESET transition is modeled as being the result of Fowler-Nordheim electron tunneling into the H 3 O + defect (possibly current-induced Joule heating due to large current flow through the filament) that stimulates proton release and electrochemical reactions to reform (SiH) 2 and (SiOH) 2 (Figure 2f) [60]. The band diagrams shown in Figure 4b are found to be consistent with measured electron energy barriers [60] and electroluminescence results reported for similar devices [62]. -based 1D-1R architecture can mimic spike-timingdependent plasticity (STDP), a biological process that adjusts the strength of connections between two neurons in a synapse gap junction region that is an electrically conductive link between the pre-and postsynaptic neurons.…”

Section: Resultssupporting

confidence: 80%

“…In recent studies, a possible proton exchange model consistent with the observed resistive switching I-V response has been proposed, as shown in Figure 2f [59,60]. Several studies have used transmission electron microscopy (TEM) to document the presence of Si nanocrystals within the CF [43,61,62], but it is not yet clear whether resistive switching (RS) is the result of an overall increase in nanocrystal size or whether switching occurs in "GAP" regions in between nanocrystals. Most models of ReRAM switching involve the drift or diffusion of O 2− ions (or oxygen vacancy defects) [39], but these models cannot explain the unconventional I-V response.…”

Section: Resultsmentioning

confidence: 94%

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Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Hsieh¹,

Chang²,

Chen³

et al. 2018

Memristor and Memristive Neural Networks

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In this chapter, we focus on the recent process on memcomputing (memristor + computing) in intrinsic SiO x -based resistive switching memory (ReRAM or called memristor). In the first section of the chapter, we investigate neuromorphic computing by mimicking the synaptic behaviors in integrating one-diode and one-resistive switching element (1D-1R) architecture. The power consumption can be minimized further in synaptic functions because sneak-path current has been suppressed and the capability for spike-induced synaptic behaviors has been demonstrated, representing critical milestones and achievements for the application of conventional SiO x -based materials in future advanced neuromorphic computing. In the next section of chapter, we will discuss an implementation technique of implication operations for logic-in-memory computation by using a SiO x -based memristor. The implication function and its truth table have been implemented with the unipolar or nonpolar operation scheme. Furthermore, a circuit with 1D-1R architecture with a 4 × 4 crossbar array has been demonstrated, which realizes the functionality of a one-bit full adder as same as CMOS logic circuits with lower design area requirement. This chapter suggests that a simple, robust approach to realize memcomputing chips is quite compatible with large-scale CMOS manufacturing technology by using an intrinsic SiO x -based memristor.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 94%

Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Hsieh¹,

Chang²,

Chen³

et al. 2018

Memristor and Memristive Neural Networks

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“…The Si nanocrystals observed using transmission electron microscopy (TEM) of SiO x devices have been associated with reversible switching where they are thought to increase in size in the LRS, thus bringing neighboring crystals closer together and increasing conductivity, 32 and where a transformation between amorphous and crystalline phases can occur within the nanocrystals. 33 We view reversible switching as being related to defect transformations near the nanocrystal surfaces and in the regions between nanocrystals, similar to models described by Mehonic et al for switching in Si-rich oxides.…”

Section: B Temperature Dependence Of Current Transport Behaviors Andmentioning

confidence: 99%

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Chang

Fowler

Chen

et al. 2014

Journal of Applied Physics

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Multilevel programing and charge transport characteristics of intrinsic SiOx-based resistive switching memory are investigated using TaN/SiOx/n++Si (MIS) and TiW/SiOx/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1 eV in the LRS and 0.6 eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ∼1 nm in the LRS for both device structures. Relative permittivity values (εr) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where εr values were ∼80 in the LRS and ∼4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed “overshoot” in the I-V response with an estimated threshold of 1.6 ± 0.2 V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO2 defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the Eγ' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7 eV. The SET threshold at ∼2.5 V is modeled as hydrogen release from the (Si-H)2 defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH)2. The results provide further insights into charge transport and help identify potential switching mechanisms in SiOx-based unipolar resistive switching memory.

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“…Zhang's group explored various 2D material-based nanodevices for electronic applications, such as graphene nanoelectromechanical system (NEMS) switch devices, ultrasensitive graphene strain sensors and electronic skin, graphene-based charge-trapping memories, and graphene nanogap multilevel memristor devices (38)(39)(40)(41)(42)(43)(44)(45)(46). They also demonstrated highly sensitive humidity sensors based on monolayer MoS 2 films with clean surfaces.…”

Section: Device Applications Based On 2d Materialsmentioning

confidence: 99%

Sponsored Collection | Humble Beginning, Bright Future: Institute of Physics (CAS) at 90

2018

Science

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Humble Beginnings, Bright Future Institute of Physics (CAS) at 90INTRODUCTIONS 3 P hysics is a field of extremes. It studies the microworld, including subatomic particles, and the macroworld, including magnetic fields and plasma found in space. It explores the lowest and highest limits of temperature, pressure, and speed. These seemingly disparate subfields are all housed at the Institute of Physics, Chinese Academy of Sciences (IOP CAS), which is commemorating its 90th year.At the nexus of all these extremes is superconductivity, or the ability of an element, intermetallic alloy, or compound to conduct electricity without resistance or energy loss below a certain temperature. Magnets and very cold temperatureson the order of 39 K (-234°C, -389°F)-are used to control the flow of electricity. Remarkably, an electrical current will flow forever in a closed loop of superconducting material, which makes it the closest thing to perpetual motion-a sort of Rube Goldberg machine for electricity.These near-magical materials are employed in devices that have revolutionized theoretical physics; for example, particle accelerators probe the inner workings of atoms, while tokamaks contain hot plasma that could one day be used in thermonuclear fusion. Superconductors are also an important factor in other technological breakthroughs, including magnetic resonance imaging machines that reduce the need for exploratory surgery, digital and quantum computers that store and transmit ever-increasing amounts of data, and Maglev trains that carry people over long distances in a much shorter time than conventional trains.Inside this supplement is a sampling of the variety of cutting-edge research that is taking place at IOP. This prestigious institute is extensively pursuing superconductivity as well as the physics of condensed and soft matter, optics, subatomic particles, plasma, magnets, and computers. Join us in celebrating IOP's long history and its incredible contributions not just to science, but to humankind.Jackie Oberst, Ph.D. Sean Sanders, Ph.D. Science/AAAS Custom Publishing OfficeExtreme Science: Celebrating 90 years of cuttingedge research at IOP CAS PHOTOS: ALEX LEE N inety years ago, the Institute of Physics (IOP) of the Chinese Academy of Sciences (CAS) was founded as the first national institute dedicated to physics research in China. Today we are celebrating our role in the international research community by honoring the past and reimagining the future.IOP has made essential contributions to the founding of modern physics research in China. The growth trajectory of IOP is almost in sync with the development of modern China. It started with a very limited number of researchers working on a small range of activities, and expanded into a large-scale research institution with an extensive, multidisciplinary scope, covering fields including condensed matter physics, optical physics, atomic and molecular physics, plasma physics, and theoretical and computational physics. Now, IOP is designated as the National Research Center...

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Tunable Electroluminescence in Planar Graphene/SiO₂ Memristors

Cited by 73 publications

References 35 publications

Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Sponsored Collection | Humble Beginning, Bright Future: Institute of Physics (CAS) at 90

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Tunable Electroluminescence in Planar Graphene/SiO2 Memristors

Cited by 73 publications

References 35 publications

Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Sponsored Collection | Humble Beginning, Bright Future: Institute of Physics (CAS) at 90

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Tunable Electroluminescence in Planar Graphene/SiO₂ Memristors