Tunable and Reconfigurable Higher‐Order Topological Insulators in Photonic Crystals with Phase Change Materials

Zhang, Yuexin; Li, Zhongfu; Xu, Shixiang; Xiang, Yuanjiang

doi:10.1002/andp.202100293

Cited by 13 publications

(2 citation statements)

References 51 publications

(67 reference statements)

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“…Photovoltaics Sb 2 Se 3 is one of the most promising solar cell absorbers because of its abundance of earth-abundant elements and long-term stability. The e ciency of Sb 2 Se 3 -based solar cells is being worked on more aggressively due to their potential photovoltaic uses [5].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

Agrawal¹,

Singh²

2023

Preprint

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The paper describes the solar cell's design, ITO/CdS/Sb2Se3/CZTSe/Au. Experimental evidence that supports the model's predictions regarding output performance and current-voltage characteristics comes from CdS/Sb2Se3 solar cells with a hole transport layer (HTL). Sb2Se3 could be used in solar cells because it is non-toxic, affordable, and performs well. Because Sb2Se3 has a high-power conversion efficiency (6.5%), it is utilized as the absorber in thin-film solar cells. By simulating a best-practice solar cell configuration, including device optimization and band offset engineering, the SCAPS-1D simulator increased solar cell efficiency. The J-V characteristics of the simulated systems were simulated using SCAPS-1D to confirm the accuracy of the results. Current research focuses on the absorber for antimony selenide photovoltaic solar cells. The solar capacitance simulator was used to evaluate thin Sb2Se3 solar cells using SCAPS-1D software. From all the simulations, the conclusion arises that CZTSe as HTL gave the highest values of open-circuit voltage (VOC), i.e., 311mV, short circuit current (JSC), i.e., 28.246%, Fill Factor (FF), i.e., 45.48%, and Power Conversion Efficiency (PCE), i.e., 4%, was obtained through proposed solar cell architecture ITO/CdS/Sb2Se3/CZTSe/Au.

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Section: Introductionmentioning

confidence: 99%

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

Agrawal¹,

Singh²

2023

Preprint

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“…[ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 ]. Using the HOTIs and their lower-dimensional boundary states, various wave control methods are proposed, for example, multi-dimensional topological switching [ 5 ], valley-selective corner sates [ 32 , 33 , 34 , 35 ], topological sub-wavelength imaging [ 36 , 37 , 38 ], and even controllable emergence of corner states enabled by non-linearity [ 39 ], voltage [ 40 ], or temperature [ 41 ]. Despite these celebrated advances, the HOTI-enabled functionalities often highly depend on the lattice geometries due to the fact that nontrivial higher-order topology is usually protected by the crystalline symmetries, which vary from lattice to lattice.…”

Section: Introductionmentioning

confidence: 99%

Reconfigurable Light Imaging in Photonic Higher-Order Topological Insulators

et al. 2022

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Topological phases of matter with robust edge states have revolutionized the fundamental intuitions for wave control. The recent development of higher-order topological insulators (HOTIs) realizes even lower dimensional topological states that enable versatile wave manipulations (e.g., light imaging). However, in conventional HOTIs, the topological states are usually protected by certain crystalline symmetries and therefore bounded at specific locations, hindering their applications in modern digital ears, which often prefer tunability and reconfigurability. Here, we report the reconfigurable light imaging based on topological corner states and anti-chiral edge states in a two-dimensional (2D) photonic HOTI with a honeycomb lattice of yttrium iron garnet (YIG, a ferrite material) rods. Sublattices A and B are applied with magnetic fields in opposite directions, which realize the so-called modified Haldane model that hosts anti-chiral edge modes. By further breaking the lattice’s inversion symmetry via adjusting the radii of A and B rods, topological edge states with valley degrees of freedom emerge, which not only exhibit valley-dependence but also surprisingly show anti-chiral behaviors. In the valley edge gap, which is of nontrivial higher-order topology, corner states appear. With different combinations of corner states and anti-chiral edge states, versatile reconfigurable light imaging can be realized. As examples, a multiplexing waveguide-resonator device, a pine tree imaging that can be lit up or put out at will and selective imaging for partial objects in a two-heart pattern are demonstrated. The proposed HOTI shows high potential in future intelligent devices with exciting tunable and reconfigurable functions, which may inspire a wide range of applications such as topological switching, imaging processing, and nonreciprocal integrated photonics.

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Flexible dimensional hierarchy of higher-order topology in the stacked Kagome-chain acoustic crystal

et al. 2023

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Manipulating wave propagation and energy collection plays a core role in modern physics, for which topological insulators hosting robust boundary states offer an ideal platform. However, there exist challenges in integrating multiple topological states like two-dimensional (2D) surface state, one-dimensional (1D) hinge state, and zero-dimensional (0D) corner state into a single three-dimensional (3D) architecture. Here we introduce a dimensional hierarchy acoustic structure with a piled 3D Kagome-chain crystal. By tuning the inter- and intra-layer hopping, we lift the 3D bulk states into 2D surface states. A further distortion on the in-plane unit cell makes the system support the 1D hinge and 0D corner states simultaneously. This hierarchy keeps the parent architecture unchanged. Analytically, we prove the robustness of our framework in different geometrical configurations. Our research offers insight for the practical use of the sonic or optical device with diversified topological modes like wave concentrations and transmissions.

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Tunable and Reconfigurable Higher‐Order Topological Insulators in Photonic Crystals with Phase Change Materials

Cited by 13 publications

References 51 publications

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

Reconfigurable Light Imaging in Photonic Higher-Order Topological Insulators

Flexible dimensional hierarchy of higher-order topology in the stacked Kagome-chain acoustic crystal

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