Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi
 2
 Se
 3
 and MoS
 2
 atomic layers

Vargas, Anthony; Liu, Fangze; Lane, Christopher; Rubin, Daniel Ian; Bilgin, Ismail; Hennighausen, Zachariah; DeCapua, Matthew; Bansil, Arun; Kar, Swastik

doi:10.1126/sciadv.1601741

Cited by 46 publications

(78 citation statements)

References 69 publications

(97 reference statements)

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“…[83] The relevant crystal structures are shown in Figure 8g-j. [83] The relevant crystal structures are shown in Figure 8g-j.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…The reason for the PL intensity suppression is that the band structure turns to an indirect nature. [83] Copyright 2017, The Authors, Published by American Association for the Advancement of Science. The optical transmittance spectra of isolated MoS 2 and the MoS 2 /n-Bi 2 Se 3 vdWH indicated that the optical transmittance continuously decreases with increasing Bi 2 Se 3 layers (as shown in Figure 9b).…”

Section: Optical Propertiesmentioning

confidence: 99%

“…[83] In addition, other MX 2 /X 2 Y 3 vdWHs, such as WS 2 /Bi 2 Te 3 , MoSe 2 /Bi 2 Se 3 , and MoS 2 /Bi 2 Te 3 vdWHs, also have been successfully fabricated in recent years. [83] In addition, other MX 2 /X 2 Y 3 vdWHs, such as WS 2 /Bi 2 Te 3 , MoSe 2 /Bi 2 Se 3 , and MoS 2 /Bi 2 Te 3 vdWHs, also have been successfully fabricated in recent years.…”

Section: Optical Propertiesmentioning

confidence: 99%

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Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Cheng

et al. 2018

Adv Elect Materials

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Due to the direct bandgap with coupled spin–valley physics, semiconducting MX2 (M = Mo, W; X = S, Se) materials have attracted considerable attention and have numerous proposed applications. With the development of 2D materials research, many 2D materials have been discovered, such as insulators, semiconductors, ferromagnetic semiconductors, topological insulators, metals, and ferromagnetic metals. van der Waals heterojunctions (vdWHs), based on MX2 and other 2D materials, have attracted increasing attention because of their various potential applications, such as field effect transistors, solar cells, photodetectors, light emitting diodes, and lasers. Based on the functionality of 2D materials, vdWHs are classified into six classes: MX2/semiconductors, MX2/insulators, MX2/topological insulators, MX2/ferromagnetic semiconductors, MX2/metals, and MX2/ferromagnetic metals. For each class of vdWHs, the structural, electronic, and optical properties, as well as potential applications in electronics and optoelectronics, are reviewed. Finally, an overview of perspectives and challenges regarding vdWHs based on MX2 materials is presented.

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“…[83] The relevant crystal structures are shown in Figure 8g-j. [83] The relevant crystal structures are shown in Figure 8g-j.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Optical Propertiesmentioning

confidence: 99%

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Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Cheng

et al. 2018

Adv Elect Materials

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“…However, Kar et al found that MoS2-Bi2Se3 shows a different electronic band structure. [106] MoS2 is grown by sulfurization of MoO3 at first, then Bi2Se3 is grown on MoS2 at 480 ℃ with Bi2Se3 powder placed on the hot zone of the furnace. The thickness is controlled by changing deposition time.…”

Section: Vertical Heterostructurementioning

confidence: 99%

“…[106] Such a heterostructure shows novel properties including 100% photoluminescence (PL) quenching, transmittance edge modulation (1.1 to 0.75 eV), suppressed Raman modes and broad band evolution of spectral transmittance. [106] Attractively, these characters can be reconfigured through a focused laser and the tunable nature of the heterostructure expands future electronic and optoelectronic applications. Except for combination between TMDs, separately grow TMDs and other layered materials is effective to form heterostructures.…”

Section: Vertical Heterostructurementioning

confidence: 99%

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

Tong¹,

Liu²,

Renli³

et al. 2017

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The layered structure of transition metal dichalcogenides (TMDs) gives rise to many novel properties for functional applications in a wide range of fields. However, successful synthesis of TMDs and directly modulating properties of TMDs during the growth process are facing great challenges, which limits their future practical applications. In this review, we focus on current state of the art chemical vapor deposition (CVD) synthesis of TMDs alloys, convenient methods to modulate properties of TMDs by CVD. Then, TMDs-based lateral and vertical heterostructures utilizing CVD methods are reviewed. Finally, we summarize patterned growth of TMDs briefly.

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Borophene via Micromechanical Exfoliation

et al. 2021

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metallic), is a new sensation in the flatland. [1][2][3] Incidentally, among various 2D materials, while boron nitride (BN) has large Young's modulus but compromised mobility, phosphorene and silicene have appreciable carrier mobility but compromised elastic behavior. [4] Graphene, considered the wonder material of this century fairs exceedingly well and its carrier mobility, as well as Young's modulus, are simultaneously high, which places it at a different pedestal. [5,6] However, e-h symmetry and spin symmetry in graphene result in insufficient signal/noise ratio in electronic as well as spintronic chips. [7] Borophene, being metallic in both β 12 and X 3 crystallographic phases, also has excellent elastic strength and electronic mobility, which altogether places it at a significant pedestal among 2D materials. The evolution of borophene is expected to bring in new dimensions to 2D-materialbased next-generation devices [8] (see the schematic plot in Figure 1a for the comparative presentation of ln (mobility) vs Young's modulus for various 2D materials). [9][10][11][12][13] Anisotropic atomic ordering results in enhanced electronic mobility ≈1.82 × 10 6 cm 2 V −1 s −1 , Young's modulus ≈398 N m −1 , and thermal conductivity along atomic ridgelines. [14,15] In particular, for flexible electronic as well as spintronic chip applications, high electron mobility and Young's modulus are desirable simultaneously and borophene Borophene, the lightest among all Xenes, possesses extreme electronic mobility along with high carrier density and high Young's modulus. To accomplish device-quality borophene, novel approaches of realization of monolayers need to be urgently explored. In this work, micromechanical exfoliation is discovered to result in mono-and few-layered borophene of device quality. Borophene sheets are successfully fabricated down to monolayer thickness. Distinct crystallographic phases of borophene viz. XRD study reveals crystallographic phase transition from rhombohedral to several other eigen phases of borophene. The role of the destination substrates is held crucial in determining the final phase of the transferred sheet. The exfoliation energy is calculated by density functional theory. Molecular dynamics simulations are used to simulate the exfoliation process. Heterolayers of borophene, with black phosphorene (BP) or with molybdenum disulfide (MoS 2 ) atomic sheets, are found to result in photoexcited coupling quantum states. Gold-coated borophene bestows promising anchoring capability for surface-enhanced Raman spectroscopy (SERS). Successful demonstration of the electronic behavior of micromechanically exfoliated borophene and excitonic behavior of borophene-based heterolayers will guide future generation devices not only in electronics and excitonics, but also in thermal management, electronic packaging, hydrogen storage, hybrid energy storage, and clean energy solutions.

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Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi ₂ Se ₃ and MoS ₂ atomic layers

Abstract: Heterocrystals: rotationally oriented stacks of incommensurate 2D materials with tunable and laser-reconfigurable properties.

Cited by 46 publications

References 69 publications

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

Borophene via Micromechanical Exfoliation

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Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi 2 Se 3 and MoS 2 atomic layers

Abstract: Heterocrystals: rotationally oriented stacks of incommensurate 2D materials with tunable and laser-reconfigurable properties.

Cited by 46 publications

References 69 publications

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

Borophene via Micromechanical Exfoliation

Contact Info

Product

Resources

About

Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi ₂ Se ₃ and MoS ₂ atomic layers