Tunability of τ in garnet-structured Y3Ga5O12 microwave dielectric ceramics

Polycrystalline Er-doped Y3Ga5O12 nanofilms fabricated by atomic layer deposition on silicon at a low temperature and the exploration on electroluminescence performance

“…6c, the value of ε r can be deduced and varies between 11.82 and 13.59, which is in good agreement with the previously reported values of 10.4–15.9. 56,57…”

“…6c, the value of ε r can be deduced and varies between 11.82 and 13.59, which is in good agreement with the previously reported values of 10.4-15.9. 56,57 It is worth noting that the prototype YGG:Er devices manifest good operation stability, and can operate continuously under an injection current of 0.5 mA (∼255 mA cm −2 and the corresponding data are shown in Fig. S6 †).…”

Effects of Ionic Coordination Bonding on Microwave Dielectric Properties of Y2CaBGa4O12 (B = Zr, Sn) Garnets

“…The ε r (C–M) and ε r (Corr) of Y 2 CaSnGa 4 O 12 were consistent but deviated significantly from those of Y 2 CaZrGa 4 O 12 . The same phenomenon occurred in Mg 3 Y 2 Ge 3 O 12 , Ca x Y 3– x Ti x Ga 5– x O 12 , and SrGe 4 O 9 due to the compression and expansion of the cation sites, which can be expressed by bond valence ( V i ) and bond length ( d ij ): , The bond valence of each ion in Y 2 CaBGa 4 O 12 (B = Zr, Sn) and their discrepancy from the ideal bond valence are illustrated in Table . The computed data indicate that the Ca 2+ is compressed at the A-site, with a larger bond valence than the normal oxidation state.…”

“…An Agilent N5230A network analyzer was carried out to determine the microwave dielectric properties of sintered Y 2 CaBGa 4 O 12 samples. (2) 24 and SrGe 4 O 9 29 due to the compression and expansion of the cation sites, which can be expressed by bond valence (V i ) and bond length (d ij ): 30,31 = i k j j j j j y 4c). Low ε r ceramics naturally keep a positive τ ε , while high ε r ceramics (>25) commonly are qualified with a negative τ ε .…”

“…Kim et al are the first to report the properties of garnet-type Y 3 Ga 5 O 12 ceramic with ε r = 11.56, Q × f = 104,728 GHz, and τ f = −21.2 ppm/°C at 1500 °C. However, Liu et al reported that Y 3 Ga 5 O 12 has low ε r = 10.4, Q × f = 98,200 GHz, with τ f = −57.4 ppm/°C, and its τ f can be close to zero through the joint regulation of the A and C positions. Regarding the difference in their properties, there remain broad spaces to explore.…”