TSV-integrated thermoelectric cooling by holey silicon for hot spot thermal management

Ren, Zongqing; Yu, Ziqi; Kim, Jae Choon; Lee, Jae-Ho

doi:10.1088/1361-6528/aaea3a

Cited by 16 publications

(4 citation statements)

References 56 publications

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“…However, this maximum value requires limiting dimensions of ∼20 nm, where achieving bulk like electrical conductivity is challenging. The data and modeling presented here are useful in the design of future thermoelectric devices such as Peltier coolers based on nanostructured silicon 31,32 . Finally, we note that the loss of phonon drag is inconsequential at high temperatures (> 600 K) where drag is absent even in the bulk due to Umklapp scattering.…”

Section: Discussionmentioning

confidence: 99%

Peak thermoelectric power factor of holey silicon films

Gelda

Valavala

et al. 2020

Journal of Applied Physics

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The thermoelectric properties of nanostructured silicon are not fully understood despite their initial promise. While the anomalously low thermal conductivity has attracted much work, the impact of nanostructuring on the power factor has mostly escaped attention. While initial reports did not find any significant changes to the power factor compared to the bulk, subsequent detailed measurements on p-type silicon nanowires showed a stark reduction in the Seebeck coefficient when compared to similarly doped bulk. The reduction is consistent with the disappearance of the phonon drag contribution, due to phonon boundary scattering. Here, we report measurements on a different nanostructure, holey silicon films, to test if similar loss of phonon drag can be observed. By devising experiments where all properties are measured on the same sample, we show that though these films possess electrical conductivity close to that in the bulk at comparable doping, they exhibit considerably smaller thermopower. The data are consistent with loss of phonon drag. At neck distances between 120 -230 nm, the power factor at optimal doping is ∼ 50 percent that of the bulk. These insights are useful in the practical design of future thermoelectric devices based on nanostructured silicon.

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Section: Discussionmentioning

confidence: 99%

Peak thermoelectric power factor of holey silicon films

Gelda

Valavala

et al. 2020

Journal of Applied Physics

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“…In recent studies, silicon nanostructures with vertically etched holes, or holey silicon, had demonstrated significant thermalconductivity reductions and anisotropic thermal conductivity in the in-plane and cross-plane directions [56][57][58]. Ren and Lee had shown that the unique thermal-conductivity anisotropy in holey silicon is ideal for thermoelectric cooling (TEC) to address onchip hot spots [59,60]. In the in-plane direction, the neck size dominated phonon boundary scattering reduces the thermal conductivity (k x and k y ), which sustains a large temperature gradient for enhanced thermoelectric effects.…”

Section: Recent Progress In Thermal Metamaterialsmentioning

confidence: 99%

Recent Advances in Thermal Metamaterials and Their Future Applications for Electronics Packaging

Kim

Ren

Yuksel³

et al. 2020

Journal of Electronic Packaging

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Thermal metamaterials exhibit thermal properties that do not exist in nature but can be rationally designed to offer unique capabilities of controlling heat transfer. Recent advances have demonstrated successful manipulation of conductive heat transfer and led to novel heat guiding structures such as thermal cloaks, concentrators, etc. These advances imply new opportunities to guide heat transfer in complex systems and new packaging approaches as related to thermal management of electronics. Such aspects are important, as trends of electronics packaging toward higher power, higher density, and 2.5D/3D integration are making thermal management even more challenging. While conventional cooling solutions based on large thermal-conductivity materials as well as heat pipes and heat exchangers may dissipate the heat from a source to a sink in a uniform manner, thermal metamaterials could help dissipate the heat in a deterministic manner and avoid thermal crosstalk and local hot spots. This paper reviews recent advances of thermal metamaterials that are potentially relevant to electronics packaging. While providing an overview of the state-of-the-art and critical 2.5D/3D-integrated packaging challenges, this paper also discusses the implications of thermal metamaterials for the future of electronic packaging thermal management. Thermal metamaterials could provide a solution to nontrivial thermal management challenges. Future research will need to take on the new challenges in implementing the thermal metamaterial designs in high-performance heterogeneous packages to continue to advance the state-of-the-art in electronics packaging.

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“…In the last decade, the thermal models of TSV, coaxial TSV, and TSV arrays have been systematically investigated and established [15,16]. Meanwhile, the thermal models of 3D ICs have also been studied [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

An Anisotropic Equivalent Thermal Model for Shield Differential Through-Silicon Vias

Shan

Chen

et al. 2021

Micromachines

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An accurate equivalent thermal model is proposed to calculate the equivalent thermal conductivity (ETC) of shield differential through-silicon via (SDTSV). The mathematical expressions of ETC in both horizontal and vertical directions are deduced by considering the anisotropy of SDTSV. The accuracy of the proposed model is verified by the finite element method (FEM), and the average errors of temperature along the X-axis, Y-axis, diagonal line, and vertical directions are 1.37%, 3.42%, 1.76%, and 0.40%, respectively. Compared with COMSOL, the proposed model greatly improves the computational efficiency. Moreover, the effects of different parameters on the thermal distribution of SDTSV are also investigated. The thermal conductivity is decreased with the increase in thickness of SiO2. With the increase in pitch, the maximum temperature of SDTSV increases very slowly when β = 0°, and decreases very slowly when β = 90°. The proposed model can be used to accurately and quickly describe the thermal distribution of SDTSV, which has a great prospect in the design of 3D IC.

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TSV-integrated thermoelectric cooling by holey silicon for hot spot thermal management

Cited by 16 publications

References 56 publications

Peak thermoelectric power factor of holey silicon films

Peak thermoelectric power factor of holey silicon films

Recent Advances in Thermal Metamaterials and Their Future Applications for Electronics Packaging

An Anisotropic Equivalent Thermal Model for Shield Differential Through-Silicon Vias

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