TSEE from Ion-Implanted LiF Crystals

Kawanishi, Masaharu; Kakiage, Toru; Kido, Y.; Oda, Keiji; Yamamoto, Tatsuya

doi:10.7567/jjaps.24s4.225

Cited by 4 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…OSEE electrons, which are released from local defect centers, are usually characterized by an energy distribution with the mean energy of ~1 eV and a maximum energy of a few eV. For this reason, released electrons are not lost by ionization and their escape depth can be considerably larger than the free path length and reach ~0.1 µm [18,19]. At this depth optical properties of defects do not differ from those in the bulk.…”

Section: Originalmentioning

confidence: 99%

See 1 more Smart Citation

Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics

Zatsepin

Biryukov

Кортов

2005

Physica Status Solidi (a)

View full text Add to dashboard Cite

A method has been proposed and substantiated for processing of nonselective optically stimulated electron emission (OSEE) spectra of irradiated crystalline and amorphous dielectrics. This method allows the separation of the emission contribution of discrete centers taking into account effects of radiation-induced electrization of materials and the unsteady state of the electron emission. Separation of OSEE selective bands facilitates the establishment of the origin of discrete emission-active centers and makes it possible to estimate the concentration and parameters of radiation defects localized in surface layers. The quantum yields of OSEE and ionization barriers of optically excited defects are calculated using kinetic and corrected isochronal temperature dependences of the emission current. Some capabilities of the method have been demonstrated by an example of glassy SiO 2 and crystalline Be 2 SiO 4 . Oxygen-deficient centers (ODCs), bulk and surface E′-centers, and also non-bridging oxygen hole centers (NBOHCs) have been recorded.

show abstract

Section: Originalmentioning

confidence: 99%

“…where n is the refraction coefficient, f is the optical transition oscillator strength, h is the maximum electron escape depth (~0.1 µm) [18,19], and K 1 (s/pulse) is the coefficient of proportionality between the OSEE intensity and the OA coefficient. The parameter K 1 represents an apparatus calibration constant, which can be found from Eq.…”

Section: Originalmentioning

confidence: 99%

Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics

Zatsepin

Biryukov

Кортов

2005

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…The PSEE electrons released from the local defective centers are usually characterized by an energy distribution with a mean energy of ,1 eV and a maximum energy not exceeding a few eV. Because of this, the ionization losses of released electrons are absent and their escape depth considerably exceeds the mean free path and reaches ,1 µm [12,13]. At such a depth, the optical properties of defects do not differ from those in the bulk.…”

mentioning

confidence: 99%

Analysis of the Nonselective Spectra of Photostimulated Electron Emission from the Surface of Irradiated Dielectrics

Zatsepin¹,

Biryukov²,

Кортов³

2005

J Appl Spectrosc

View full text Add to dashboard Cite

The methodological aspects of PSEE spectroscopy of the surface of irradiated dielectrics have been considered. A generalized method for processing the nonselective photostimulated electron emission (PSEE) spectra taking into account the effects of radiation electrification and structural disordering is proposed and has been substantiated. The procedure of separation of the emission contribution of discrete radiation centers providing, in the stationary approach, estimation of a number of parameters and the concentration of emission-active defects of the surface layer of the material has been described. The potentialities of the method have been demonstrated with the example of Be 2 SiO 4 phenacite crystals and crystalline and glassy SiO 2 . Diamagnetic oxygen-deficient centers, body and surface E ′ -centers, as well as hole O 1 0 -centers on nonbridging oxygen atoms have been registered.

show abstract

“…where h is the escape depth of electrons (,0.1 µm [11,12]); K 2 is the second apparatus constant 1 (2.53⋅10 7 pulse −1 ⋅cm −2 for our experimental facility). The parameter K 2 was determined by us from (21) with the use of a set of standard samples of SiO 2 glass and α−Al 2 O 3 crystal with a known concentration of defects by the kinetic curves of the OSEE of the radiation E 1 ′ -and F-centers, respectively.…”

mentioning

confidence: 99%

Taking Account of the Nonstationarity in Analyzing the Optically Stimulated Electron Emission of Irradiated Dielectrics

Zatsepin¹,

Biryukov²,

Кортов³

2005

J Appl Spectrosc

View full text Add to dashboard Cite

The distortions of the optically stimulated electron emission (OSEE) spectra resulting from the exponential decay in the recording time have been analyzed. It has been shown that taking account of the emission current nonstationary in analyzing the emission spectra permits obtaining isochronal temperature dependences of intensity for selective OSEE bands. The procedure for calculating the quantum yield of the OSEE and the activation barriers of thermal ionization of the excited states of defects is described. Analysis of the photoemission kinetics permits estimating the concentration of active OSEE centers with unknown parameters (optical transition oscillator strength, quantum yield). For diamagnetic oxygen-deficient centers in glassy SiO 2 , the photoemission kinetics has been calculated and the thermal ionization barrier of the photoexcited singlet state and the quantum yield of the OSEE have been determined.Introduction. In our previous work [1], it has been shown that the photoemission properties of the surface of irradiated dielectrics can be interpreted in the stationary approximation. In most cases, such an approach proves to be totally justified and sufficient for estimating a number of characteristics of point defects and the photoemission properties of the surface layer of investigated dielectric materials. At the same time, it should be noted that the stationary approach does not explicitly take into account the distortions of the experimental OSEEs arising during their recording due to the nonstationarity of the emission process [2]. And the question of the qualitative aspect of the degree of distortion of the spectra as well as of the applicability limits of the above approximation in studying the nature of the centers and the laws and mechanisms of OSEE is still open [3][4][5][6]. It may be expected that the most appreciable effect on the results of the OSEE spectra analysis will be produced by the emission nonstationarity in the case of measurements under nonisothermal conditions, where the decay rate of the emission centers varies over a wide range [2].The main aim of the present paper is to develop a method for OSEE spectra processing with allowance for the nonstationarity of the emission kinetics. In so doing, we additionally aim at revealing new information capabilities of nonstationary OSEE spectroscopy as applied to the analysis of the physical parameters of point defects.Photoemission Decay Model. Investigations of the kinetic mechanisms of the relaxation processes of excited states [7] show that they are described, as a rule, by the hyperbolic or the exponential law. When the mechanism of OSEE incorporates the stage of intracenter optical excitation of the defect, then the emission decay obeys the laws of monomolecular kinetics similarly to the processes of radioactive decay [7]. In this case, release of an electron from each local center occurs independently of the state of the other centers and is only determined by the probability of its decay. Therefore, the decay rate of emission cent...

show abstract

TSEE from Ion-Implanted LiF Crystals

Cited by 4 publications

References 0 publications

Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics

Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics

Analysis of the Nonselective Spectra of Photostimulated Electron Emission from the Surface of Irradiated Dielectrics

Taking Account of the Nonstationarity in Analyzing the Optically Stimulated Electron Emission of Irradiated Dielectrics

Contact Info

Product

Resources

About