Tritium locked in silica using 248nm KrF laser irradiation

Liu, Baojun; Chen, Kevin P.; Kherani, Nazir P.; Żukotyński, S.; Antoniazzi, A.B.

doi:10.1063/1.2188384

Cited by 7 publications

(8 citation statements)

References 13 publications

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“…The tritium loading system is described elsewhere. 6 Tritium pressures of up to 120 atm at 250°C can be attained. All a-Si: H samples used in these experiments were prepared on crystalline silicon substrates, at various temperatures, using the dc saddle-field PECVD technique.…”

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confidence: 98%

Tritiation of amorphous and crystalline silicon using T2 gas

Liu

Chen

Kherani

et al. 2006

Applied Physics Letters

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confidence: 98%

Tritiation of amorphous and crystalline silicon using T2 gas

Liu

Chen

Kherani

et al. 2006

Applied Physics Letters

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“…The effusion profile for aSi:H2 can be found in Ref. 11. The profiles show that tritium begins to effuse significantly above a loading temperature of 250 C and that most of the tritium is effused below 700 C.…”

Section: A Tritium Contentsmentioning

confidence: 99%

“…11,19 Tritium effusion experiments were conducted in order to determine the atomic concentration in the samples and its bonding characteristics. 17,18 The detailed experimental setup and procedure have been described previously 17,18 and is briefly described here.…”

Section: Methodsmentioning

confidence: 99%

“…Tritium (T, 3 H), the radioactive isotope of hydrogen, is one of the best candidates for chip-scale RIMS from nW to lW level. [6][7][8][9][10][11][12][13] As a by-product of many nuclear power plants, tritium is plentiful and available at relatively low cost. It is a pure b emitter with benign radiation and moderate half-life of 12.3 years.…”

Section: Introductionmentioning

confidence: 99%

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Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Liu¹,

Chen²,

Kherani³

et al. 2011

Journal of Applied Physics

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Experimental results on tritium effusion, along with the tritium depth profiles, from hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) tritiated in tritium (T2) gas at various temperatures and pressures are presented. The results indicate that tritium incorporation is a function of the material microstructure of the as-grown films, rather than the tritium exposure condition. The highest tritium concentration obtained is for a-Si:H deposited at a substrate temperature of 200°C. The tritium content is about 20 at. % on average with a penetration depth of about 50 nm. In contrast, tritium occluded in the c-Si is about 4 at. % with penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is much higher than the reported results for the post-hydrogenation process. β irradiation appears to catalyze the tritiation process and enhance tritium dissolution in the silicon matrix. The combination of tritium decay and β-induced ionizations results in formation of reactive species of tritium (tritium atoms, radicals, and ions) that readily adsorb on silicon. The electron bombardment of the silicon surface and subsurface renders it chemically active thereby promoting surface adsorption and subsurface diffusion of tritium, thus leading to tritium occlusion in the silicon matrix. Gaussian deconvolution of tritium effusion spectra yields two peaks for a-Si:H films tritiated at high temperature (250°C), one low temperature (LT) peak which is attributed to tritiated clusters and higher order tritides, and another high temperature peak which is attributed to monotritides. Activation energy of 2.6–4.0 eV for the LT peak was found.

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“…2,4,7,8 Tritium is a pure beta emitter producing energetic electrons with an average energy of 5.7 keV and a maximum energy of 18.6 keV. Considering that the threshold electron energy for disruption of the silicon lattice due to knock-on collisions is 20 keV, 9 tritium decay beta particles pose little radiation damage concern for on-chip energy conversion devices.…”

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Betavoltaics using scandium tritide and contact potential difference

Liu

Chen

Kherani

et al. 2008

Applied Physics Letters

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Tritium-powered betavoltaic micropower sources using contact potential difference ͑CPD͒ are demonstrated. Thermally stable scandium tritide thin films with a surface activity of 15 mCi/ cm 2 were used as the beta particle source. The electrical field created by the work function difference between the ScT film and a platinum or copper electrode was used to separate the beta-generated electrical charge carriers. Open circuit voltages of 0.5 and 0.16 V and short circuit current densities of 2.7 and 5.3 nA/ cm 2 were achieved for gaseous and solid dielectric media-based CPD cells, respectively. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2887879͔Recently, miniaturized radioisotope micropower sources have drawn significant attention because of their potential of providing a long-term energy solution for niche low-power consuming microsystems for a range of applications including exploration and surveillance. 1-6 A number of nuclear-toelectrical energy conversion integrations, which had been investigated previously, are receiving renewed attention and novel materials and modern microfabrication techniques are being introduced. 1,3 In recent years, a series of studies have been reported on betavoltaics employing semiconductor pn junction using materials such as amorphous silicon, 2 porous silicon, 4 silicon carbide, 5,6 and gallium arsenide/nitride. 1 The efficiency and longevity of these battery structures rely on high-quality pn junctions, which are often susceptible to radiation damage and lack structural self-healing resiliency.One simple method of converting the kinetic energy of ionizing radioemissions into electrical energy is to utilize a contact potential difference ͑CPD͒ device produced from materials with dissimilar work functions. An appropriate dielectric medium, in the form of a thin film, gas, or liquid, is sandwiched between the two dissimilar electrodes. An ionizing radiation source, dispersed within the dielectric medium or included in an electrode, provides the energy source for electron-ion pair generation. Charge carriers are separated by the built-in electric field, created by the contact potential difference of the electrodes, generating current in an external load. A CPD-based micropower source is relatively simple to implement and can be integrated for on-chip applications.Tritium, a radioisotope of hydrogen, is a good candidate for betavoltaic applications given its benign radiation characteristics, its relatively long half-life of 12.3 years, and availability. 2,4,7,8 Tritium is a pure beta emitter producing energetic electrons with an average energy of 5.7 keV and a maximum energy of 18.6 keV. Considering that the threshold electron energy for disruption of the silicon lattice due to knock-on collisions is 20 keV, 9 tritium decay beta particles pose little radiation damage concern for on-chip energy conversion devices. These factors make tritium an appealing power source for on-chip applications. Tritium in the gaseous form has been used in self-power lighting and in betavoltaic ...

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Tritium locked in silica using 248nm KrF laser irradiation

Abstract: Articles you may be interested inLaser induced effects on ZnO targets upon ablation at 266 and 308 nm wavelengths J. Appl. Phys.

Cited by 7 publications

References 13 publications

Tritiation of amorphous and crystalline silicon using T2 gas

Tritiation of amorphous and crystalline silicon using T2 gas

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Betavoltaics using scandium tritide and contact potential difference

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