1986
DOI: 10.1016/0042-207x(86)90125-9
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Triplasmatron sources for broad and reactive ion beams

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1986
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Cited by 10 publications
(2 citation statements)
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“…7 We have developed several procedures for running SF 6 in a duoplasmatron that minimize these effects. The most promising approach is to modify the duoplasmatron to operate in the triplasmatron configuration as originally described by Masic et al, 8 Aubert et al 9 and Gautherin et al 10 In a triplasmatron ion source, the plasma jet from a duoplasmatron operating with an inert gas such as argon is allowed to expand into an apertured and conducting ''expansion cup'' mounted on the extraction side of the anode aperture of the source ͑expansion cups are commonly used in plasma beam ion sources to reduce the plasma density making for easier beam formation and transport 11 ͒.…”
Section: Introductionmentioning
confidence: 99%
“…7 We have developed several procedures for running SF 6 in a duoplasmatron that minimize these effects. The most promising approach is to modify the duoplasmatron to operate in the triplasmatron configuration as originally described by Masic et al, 8 Aubert et al 9 and Gautherin et al 10 In a triplasmatron ion source, the plasma jet from a duoplasmatron operating with an inert gas such as argon is allowed to expand into an apertured and conducting ''expansion cup'' mounted on the extraction side of the anode aperture of the source ͑expansion cups are commonly used in plasma beam ion sources to reduce the plasma density making for easier beam formation and transport 11 ͒.…”
Section: Introductionmentioning
confidence: 99%
“…This gun has been especially developed in order to satisfy the various requirements of ion-beam assisted processeseither deposition or etching. In particular a steadystate operation may be reached for the operation with fluorocarbon gases which generally leads to the deposition of insulating films on the chamber walls or electrodes [12]. Because of the small anode the temperature of which may be far above room temperature no deposition occurs on the anode which conversely is slowly etched.…”
mentioning
confidence: 99%