Trimethylamine Gallane as a Precursor to Cubic Gallium Nitride and Gallium Arsenide. Metal Hydride Chemical Vapor Deposition

Abstract

Cyclo-trigallazane, [H2GaNH2]3, is known to form bulk powders of the new cubic phase of gallium nitride upon pyrolysis. An explanation for this unusual example where the molecular structure of the precursor controls the crystal structure of the solid state product is presented. In a hot-wall atmospheric pressure chemical vapor deposition (CVD) reactor, arsine was found to react with TMAG to form films of polycrystalline GaAs which were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth rates for smooth films was 1-4 μm/h. In a low pressure CVD reactor, elemental arsenic vapor was also found to react with the TMAG to give GaAs thin films.

Growth of Group III Nitrides. A Review of Precursors and Techniques

“…The trimethylamine alane and ammonia reaction on an alumina surface is similar to the gas-phase reaction and has been shown to react with ammonia at room temperature to form cyclotrigallazane, [H 2 GaNH 2 ] 3 , which can be further pyrolized to give cubic GaN powder or ALE which minimize parasitic gas-phase reactions.…”

Recent advances in metal-organic vapor phase epitaxy

“…The amine group serves to stabilize the alane while preserving sufficient volatility. The analogous compound containing Ga has been also been synthesized and used in preliminary studies of GaAs growth [52]. The alane decomposes cleanly to AI metal at low temperatures.…”