Recent advances in metal-organic vapor phase epitaxy

Kuech, T. F.

doi:10.1109/5.168669

Cited by 17 publications

(3 citation statements)

References 114 publications

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“…The reaction of trimethylgallium with arsenic compounds such as AsH 3 represents one possible route to heteroepitaxial growth of GaAs on Si(001). − Bronikowski et al examined the adsorption of trimethylgallium (TMG) with Si(001) at room temperature and elevated temperatures. At room temperature, the interaction of TMG with Si(001) is partially dissociative.…”

Section: J Interaction Of Trimethylgallium With Si(001)mentioning

confidence: 99%

Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces

1996

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Section: J Interaction Of Trimethylgallium With Si(001)mentioning

confidence: 99%

Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces

1996

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“…One avenue to delivery of metals that are challenging to evaporate in a conventional effusion cell is the use of a metalorganic precursor, many of which are now ubiquitous thanks to the widespread use of atomic layer deposition (ALD). While this approach is not new, dating back to the growth of metalorganic MBE (MOMBE) in the 1980 s [49], it has only been commonly applied in oxide MBE since circa 2007 [5,50]. By redesigning an MBE chamber to accommodate a heated gas injector and developing a pressure-regulated feedback loop, metalorganic precursors can be delivered into an ultrahigh vacuum environment.…”

Section: Hybrid and Metalorganic Mbementioning

confidence: 99%

Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Rimal,

Comes

2024

J. Phys. D: Appl. Phys.

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Molecular beam epitaxy (MBE), a workhorse of the semiconductor industry, has progressed rapidly in the last few decades in the development of novel materials. Recent developments in condensed matter and materials physics have seen the rise of many novel quantum materials that require ultra-clean and high-quality samples for fundamental studies and applications. Novel oxide-based quantum materials synthesized using MBE have advanced the development of the field and materials. In this review, we discuss the recent progress in new MBE techniques that have enabled synthesis of complex oxides that exhibit "quantum" phenomena, including superconductivity and topological electronic states. We show how these techniques have produced breakthroughs in the synthesis of 4d and 5d oxide films and heterostructures that are of particular interest as quantum materials. These new techniques in MBE offer a bright future for the synthesis of ultra-high quality oxide quantum materials.

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“…For many years, metalorganic chemical vapor deposition (MOCVD) processing was constrained by the limited availability of different types of metalorganic sources. Recently, the widespread use of MOCVD for processing advanced electronic materials has generated a steady increase in the commercial availability of a variety of precursor compounds, enhancing the versatility of MOCVD as a materials synthesis technique. , Surface chemistry studies have effectively revealed viable routes to AlN thin-film formation at lower temperatures via surface reactions between specially chosen precursors. − …”

Section: Introductionmentioning

confidence: 99%

Chemical Composition of AlN Thin Films Deposited at 523−723 K Using Dimethylethylamine Alane and Ammonia

et al. 1998

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We have investigated a process for depositing AlN thin films at temperatures less than 800 K via surface reactions between specially chosen precursors. An Al precursor, dimethylethylamine alane (DMEAA, (CH 3 ) 2 C 2 H 5 N:AlH 3 ) was used with ammonia (NH 3 ), and the reactants were delivered to the growth surface in separate steps using an atomic layer growth (ALG) process to promote film formation through a sequence of surface reactions. AlN thin films were deposited on Si(100), Si(111), Al 2 O 3 (00.1), and Al 2 O 3 (01.2) substrates at 523-723 K using a range of process flow conditions. Auger and X-ray photoelectron spectroscopy were employed to characterize the chemical composition of the films. These measurements detected carbon and oxygen contamination at the surface and smaller concentrations in the bulk. In the high-resolution X-ray photoelectron spectroscopy C(1s) data, binding energies for C-H and C-N species were identified but no C-Al species were present. In the N(1s) data, N-O species were not detected, but chemically bonded H was present in the films as NH 3-x (x ) 0-2) species. The composition varied with process conditions, and the hydrogen content decreased in AlN films processed above 600 K.

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Recent advances in metal-organic vapor phase epitaxy

Cited by 17 publications

References 114 publications

Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces

Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces

Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Chemical Composition of AlN Thin Films Deposited at 523−723 K Using Dimethylethylamine Alane and Ammonia

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