Triggered single photon emission up to 77K from ordered array of surface curvature-directed mesa-top GaAs/InGaAs single quantum dots

Abstract

We demonstrate triggered single photon emission up to 77K from an ordered 5x8 array of InGaAs single quantum dots (SQDs). The SQDs are grown selectively on patterned mesa tops utilizing substrate-encoded size-reducing epitaxy (SESRE). It exploits designed surface-curvature stress gradients to preferentially direct atom migration from mesa sidewalls to the top during growth. The emission from the SQDs exhibits a g⁽²⁾(0) of 0.19 ± 0.03 at 8K and decent emission spectral uniformity (standard deviation <1% of emission wavelength). The SESRE QDs are inherently compatible with on-chip integrated light manipulation elements, thereby enabling a path towards integrated nanophotonic systems for quantum information processing.

Highly pure single photon emission from spectrally uniform surface-curvature directed mesa top single quantum dot ordered array

“…The synthesized GaAs(001)/In0.5Ga0.5As/GaAs MTSQDs (Fig. 1(b)) being reported on here were shown to be efficient single photon emitters at 10K with g (2) (0) ~0.15 and maintain reasonable single photon emission (g (2) (0) ~0.3) up to liquid nitrogen temperature 5,6 . The emission wavelength from every MTSQD in the 5×8 array is shown in Fig.…”

“…Realizing spatially ordered single photon sources that can be readily integrated with light manipulating elements in a scalable architecture has been a major goal towards realizing on-chip integrated quantum optical circuits [1][2][3] (QOCs) for applications in quantum communication and quantum information processing (QIP). A significant step towards this goal was recently taken with the demonstration of 5×8 array of a new class of semiconductor single quantum dots that form on the top of laterally confined mesas with unprecedented control on shape and size [4][5][6] . These mesa-top single quantum dots (MTSQDs) are formed by site-selective size-reducing epitaxy on nanomesas fabricated with specifically chosen edge orientations that induce directedmigration of atoms symmetrically from the sidewalls to the mesa top (Fig.…”

“…These mesa-top single quantum dots (MTSQDs) are formed by site-selective size-reducing epitaxy on nanomesas fabricated with specifically chosen edge orientations that induce directedmigration of atoms symmetrically from the sidewalls to the mesa top (Fig. 1(a)) during growth, thus ensuring spatially-selective growth on mesa top [4][5][6] (Fig. 1(b)).…”

“…1(c). These MTSQDs are formed with considerable control on size and shape and thus, as grown, exhibit highly uniform PL emission with a standard deviation of ~8 nm, much better than the commonly employed lattice mismatch strain-driven spontaneously formed 3D island quantum dots dubbed self-assembled quantum dots (SAQDs) 5,6 .…”

Mesa-top quantum dot single photon emitter arrays: Growth, optical characteristics, and the simulated optical response of integrated dielectric nanoantenna-waveguide systems

“…For the SPS array, we report on the fabrication and optical characterization of spatially-ordered and spectrally-uniform SPS 5x8 array (Fig. 1a) based on GaAs(001)/InGaAs/GaAs SQD residing on nanomesa tops synthesized through the approach of substrate-encoded size-reducing epitaxy (SESRE) 23,24,25 that naturally lends itself to on-chip integration with light manipulation units. The array exhibits an average g (2) (0) of 0.19±0.03 at 8 K reflecting good quantum confinement.…”