Tribochemical interaction between nanoparticles and surfaces of selective layer during chemical mechanical polishing

Ilie, Filip

doi:10.1007/s11051-013-1997-3

Cited by 8 publications

(6 citation statements)

References 22 publications

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“…These are the very important factors for determining the polishing performance and for understanding the CMP process. Major changes in the nanoparticles-substrate interactions can appear as a result of a variation in the nanoparticle size distribution in the slurry, due to contamination of oversized nanoparticles or loss of the slurry stability [4,7,17]. Thus, the MRR response can vary and can be manifested in the poor control process increasing the number of surface deformations, giving birth to micro/nano-scale defects.…”

Section: Technological and Technical Issuesmentioning

confidence: 99%

“…By scanning with an atomic force microscope (AFM) of the selective layer after the chemical mechanical planarization (CMP) process it is found that the surface of the oxide layer is removed at different rates depending on the depth of removal and the pH of the solution. CMP is a material removal and surface smoothing process, which is possible by the combination of chemical and mechanical interactions [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…To optimize selective layer CMP it is necessary to control the chemical and mechanical interactions at the interface between the slurry and selective layer during the planarization process [4,5]. It will also require a deeper understanding of the material removal rate (MRR) during planarization and a determination of the specific role of each chemical constituent in the slurry [6].…”

Section: Introductionmentioning

confidence: 99%

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Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

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This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer. The paper aims at a better understanding of the planarization (polishing) and micromachining. The planarization becomes effective if the material removal rate (MRR) is optimal and the surface defects are minimal. The pH of the slurry plays a very important role in removing the selective layer by CMP, and hydrogen peroxide (H 2 O 2 ) is the most common oxidizer used in CMP slurry. The purpose of this paper is the analysis of the pH effect on the etching rate (ER) and on the behavior of selective layer polishing by a constant concentration of H 2 O 2 and the influence of nanoparticles size and concentration on selective layer surface CMP. The nanoparticle size used is 250 nm. The MRR results through CMP and ER have been shown to be influenced by the presence of oxides on the selective layer surface and have been found to vary with the slurry pH at constant H 2 O 2 concentrations. The CMP slurry plays an important role in the CMP process performance and should be monitored for optimum results and minimal surface defects. The paper analyzes the impact of chemical-mechanical, inter-nanoparticle, and pad-nanoparticle-substrate interactions on CMP performance, taking into account the state of friction at the interface, by measuring the friction force. Selective layer CMP optimization studies were required to control the chemical and mechanical interactions at the interface between the slurry and the selective layer, the slurry chemistry, the properties, and the stability of the suspended abrasive nanoparticles.

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Section: Technological and Technical Issuesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

Self Cite

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“…Regardless of chemical erosion or reaction, the mechanical wear is influenced by many variables in a typical polishing process, such as process parameters including pressure, indentation depth and velocity and other important parameters including the wafer nature, abrasive size, and abrasive geometry, etc. [1,3,[8][9][10][11]. In addition, the slurry is another factor which has a significant effect on the polishing environment and makes the polishing process more complicated [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process

Shi¹,

Peng²,

Chen³

et al. 2018

Preprint

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The surface planarity and asperity removal behaviors of atomic scale under the ultrathin water environment was studied for the nanoscale process by molecular dynamics simulation. The monolayer atomic removal was achieved under the noncontact and monoatomic layer contact conditions with different water film thickness, and the newly formed surface is relatively smooth and no deformed layer and plastic defects exist. The nanoscale processing is governed by the interatomic adhering action during which the water film transmits the loading forces to Cu surface and thereby result in the migration and removal of surface atoms. With scratching depth ≥ 0.5 nm, the abrasive particle squeezed out the water film from scratching region and scratched Cu surface directly, leading to the surface quality deterioration mainly governed by the plowing action. This study brings the goals of “0 nm planarity, 0 residual defects and 0 polishing pressure” closer to us in the nanoscale process for the development of ultra-precision manufacture technology.

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“…Solid-solid contact is responsible for the MRR [62]. Many researchers have confirmed the relationship [23,31,39,41,52,65,68,[121][122][123][124][125]. It can be explained that when the pressure increases, the penetration depth of abrasive particles on the wafer surface increases [126,127].…”

Section: Materials Removal Ratementioning

confidence: 99%

Computational analysis and chemical mechanical polishing for manufacturing of optical components

Nguyen¹

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Tribochemical interaction between nanoparticles and surfaces of selective layer during chemical mechanical polishing

Cited by 8 publications

References 22 publications

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process

Computational analysis and chemical mechanical polishing for manufacturing of optical components

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