Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process

Abstract

The surface planarity and asperity removal behaviors of atomic scale under the ultrathin water environment was studied for the nanoscale process by molecular dynamics simulation. The monolayer atomic removal was achieved under the noncontact and monoatomic layer contact conditions with different water film thickness, and the newly formed surface is relatively smooth and no deformed layer and plastic defects exist. The nanoscale processing is governed by the interatomic adhering action during which the water film transmits the loading forces to Cu surface and thereby result in the migration and removal of surface atoms. With scratching depth ≥ 0.5 nm, the abrasive particle squeezed out the water film from scratching region and scratched Cu surface directly, leading to the surface quality deterioration mainly governed by the plowing action. This study brings the goals of “0 nm planarity, 0 residual defects and 0 polishing pressure” closer to us in the nanoscale process for the development of ultra-precision manufacture technology.