Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors

Abstract

The design of two-dimensional periodic structures at the nanoscale has renewed attention for band structure engineering. Here, we investigate the nanoperforation of InGaAs quantum wells epitaxially grown on InP substrates using high-resolution e-beam lithography and highly plasma based dry etching. We report on the fabrication of a honeycomb structure with an effective lattice constant down to 23 nm by realising triangular antidot lattice with an ultimate periodicity of 40 nm in a 10 nm thick InGaAs quantum well on a p-type InP. The quality of the honeycomb structures is discussed in detail, and calculations show the possibility to measure Dirac physics in these type of samples. Based on the statistical analysis of the fluctuations in pore size and periodicity, calculations of the band structure are performed to assess the robustness of the Dirac cones with respect to distortions of the honeycomb lattice.

Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on Vergel1, Tadjine2, Notot3 et al. 2019Phys. Rev. MaterialsSelf Cite6140View full textAdd to dashboardCite

“…We used the tight-binding parameters of Ref. [19] which give an energy gap of 816 meV for the In 0.53 Ga 0.47 As bulk, consistent with Ref. [20].…”

Trapping of Electrons around Nanoscale Metallic Wires Embedded in a Semiconductor Medium

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Topology, flat bands and magnetic fields in artificial electronic lattices

“…The design is purely based on the lattice geometry and the degree of quantum confinement and inter-site coupling. These concepts can, therefore, be directly transferred to two-dimensional semiconductors in which the honeycomb geometry is lithographically patterned [14,[112][113][114], or, obtained by nanocrystal assembly [71,115]. Such honeycomb semiconductors can be incorporated in transistor-type devices in which the Fermi level and thus the density of the electron gas can be fully controlled [14,116].…”