Triangular CNT bundles as VLSI interconnects

Sathyakam, P. Uma; Bisht, Ajay; Tandon, Yash; Mallick, P. S.

doi:10.1109/icemelec.2016.8074592

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…Our earlier works have modelled the propagation delay, power dissipated and power delay product of both the interconnect structures. 16,17 Further work on crosstalk analysis reveals that T-CNT bundles perform better than S-CNT bundles due to the reduced coupling capacitance of triangular CNT bundles. 16 Power dissipation trends.-Power dissipation in ICs can be categorised as static and dynamic power dissipation.…”

Section: Proposed Fabrication Steps Of T-cnt Bundle Interconnectsmentioning

confidence: 99%

Perspective—Demystifying the Power Withstanding Capabilities of CNT Bundle Interconnects

Robert

Sathyakam

2022

ECS J. Solid State Sci. Technol.

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This article discusses power consumption trends of two geometries of carbon nanotube (CNT) bundle interconnects for very large scale integration applications. Electrostatic and electrothermal field simulations of square and triangular CNT bundle interconnects were done. Two factors viz. power dissipated and peak temperature are extracted and a new figure of merit called power temperature product (PTP) is defined. The PTP is calculated for interconnect lengths ranging from 500 to 2000µm. Results show that both triangular and square CNT bundles have high power withstanding capacity. Triangular CNT bundles have higher PTP when the associate phase changes are ignored.

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Section: Proposed Fabrication Steps Of T-cnt Bundle Interconnectsmentioning

confidence: 99%

Perspective—Demystifying the Power Withstanding Capabilities of CNT Bundle Interconnects

Robert

Sathyakam

2022

ECS J. Solid State Sci. Technol.

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“…Many works in literature discusses the models of CNT based interconnects. [20][21][22][23] Basically, a bundle of CNTs are used to mitigate the problem of high resistivity of a single CNT, which is around 6.45 kΩ μm −1 . Figure 1 shows the CNT bundle geometry used in this work.…”

Section: Interconnect Circuit Modelsmentioning

confidence: 99%

Performance Analysis of CNT Bundle Interconnects in Various Low-k Dielectric Media

Shefali¹,

Fatima²,

Sathyakam³

2022

ECS J. Solid State Sci. Technol.

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The capacitance of the interconnect, which contributes to RC delay, power, and crosstalk, is increasingly limiting the performance of ULSI chips as IC technology advances. Different dielectric materials are employed as electrical shielding between interconnects (also called as inter-wire dielectrics) to minimise the coupling capacitance of closely spaced interconnects, and they are compared in terms of their performance. For SWCNT and MWCNT interconnects at various global interconnect lengths for 20 nm and 14 nm technology nodes, performance parameters such as crosstalk delay, power dissipation, power crosstalk delay product (PCDP) and crosstalk noise are calculated and compared. It is observed that, upon using different dielectric materials in CNT bundle interconnect, MWCNT bundle interconnects is performing better compared to SWCNT bundle interconnects at 20 nm and 14 nm technology nodes for all global interconnect lengths.

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Performance Analysis of Square and Triangular CNT Bundle Interconnects Driven by CNTFET-Based Inverters

Sathyakam

Banerjee

Mallick

2020

Micro-Electronics and Telecommunication Engineering

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Triangular CNT bundles as VLSI interconnects

Cited by 6 publications

References 8 publications

Perspective—Demystifying the Power Withstanding Capabilities of CNT Bundle Interconnects

Perspective—Demystifying the Power Withstanding Capabilities of CNT Bundle Interconnects

Performance Analysis of CNT Bundle Interconnects in Various Low-k Dielectric Media

Performance Analysis of Square and Triangular CNT Bundle Interconnects Driven by CNTFET-Based Inverters

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