Abstract:We report on the design, fabrication and performance electro-optic switches based on a Mach-Zehnder interferometer with traveling wave electrodes. Our work aimed at increasing the bandwidth of such devices by reducing the loss parameter a of the electrodes. We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s
“…It has been demonstrated that the intrinsic polarization dependence of silicon photonic modulators can be overcome with bidirectional modulation schemes 3 . However, conventional travelling-wave modulators 4 are constructed for unidirectional operation with copropagating (co) electrical and optical waves. For bidirectional operation, when electrical and optical waves are also counter-propagating (ctr), the bandwidth is limited to a few GHz 3 .…”
Abstract:We propose a bidirectional, polarization-independent, recirculating IQ-modulator scheme based on the silicon-organic hybrid (SOH) platform. We demonstrate the viability of the concept by using an
“…It has been demonstrated that the intrinsic polarization dependence of silicon photonic modulators can be overcome with bidirectional modulation schemes 3 . However, conventional travelling-wave modulators 4 are constructed for unidirectional operation with copropagating (co) electrical and optical waves. For bidirectional operation, when electrical and optical waves are also counter-propagating (ctr), the bandwidth is limited to a few GHz 3 .…”
Abstract:We propose a bidirectional, polarization-independent, recirculating IQ-modulator scheme based on the silicon-organic hybrid (SOH) platform. We demonstrate the viability of the concept by using an
We present an efficient modelling method based on quasi-static TEM analysis to design travelling wave InP Mach-Zehnder modulators. The analysis uses a conformal mapping technique to determine the equivalent circuit elements directly from the physical structure of the modulator waveguide layer stack. These elements are then used to investigate the propagation properties of the phase shifting section of the modulator. The fast computation time allows extraction of various design curves involving multiple design variables in order to optimise the modulation bandwidth. The contact resistance has been incorporated in the model to demonstrate the significance of low contact resistance for high modulation efficiency. The full structure is then simulated in HFSS. A modulator based on all these design optimisations has been fabricated and tested. Small signal measurements agree very well with the simulations. An electrical bandwidth of 21 GHz has been achieved which is suitable for optical modulation of data rates >20 Gbps. The designed modulator is also suitable for photonic integration.
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