Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors

Abstract

Electron trapping-detrapping phenomena were studied for InAlN/GaN high electron mobility transistors (HEMTs) by drain currentdrain voltage static and pulsed current voltage (I-V) characteristics, gate current I-Vs, transfer characteristic measurements, current deep level transient spectroscopy (CDLTS) with gate voltage pulsing, and by drain current transient measurements following both drain and gate voltage steps. The electron trapping processes are temperature activated with activation energies of 1.1 eV for drain voltage steps and 1 eV and 0.75 eV for gate voltage steps. Detrapping processes show activation energies 0.9 eV and (0.7-0.75) eV. Drain current transients are accurately described by the sum of two stretched exponents. The amplitudes of CDLTS peaks corresponding to electron trapping and electron detrapping processes show la ogarithmic dependence on the width of the injection pulse, indicating that the traps are related to dislocations.

Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors

“…Figure 3c shows pulsed I d -V d characteristics at 25 • C with the base gate voltage V g = 0 V and different amplitudes of pulsed gate QV g and drain voltages QV d which precede pulsed I d -V d measurements at each V d . 34,35 The drain current is reduced when a high reverse gate voltage pulse QV g is applied before each measurement. The amount of drain current collapse induced by the reverse gate voltage pulsing should be close to the difference between the slow ramp and the fast ramp I d -V d branches, corresponding to the Vg sweep from −40 V to 0 V, i.e.…”

“…To study the spectra of deep traps involved in drain current lag in the on-or off-states is to perform CDLTS measurements with channel closed or semi-closed and pulsed to on-state, or from on-state and pulsed to off-or semi-off state. 34,35 When the Ga 2 O 3 channel is kept at reverse gate bias, the parts of the deep electron traps in it are depleted of electrons. Removing the reverse gate voltage during the forward V g pulse fills the traps with electrons, which have to be emitted after the end of the pulse, producing an increase of the drain currents with time after the pulse.…”

“…33 We also measured the spectra of drain current with optical excitation from a set of high-power (optical power 250 mW) light emitting diodes with wavelengths from 365 nm to 940 nm. 34,35…”

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

“…In order to better understand the trapping mechanism, a time-dependent analysis is proposed in this section by using an Arrhenius plot. Different methods are presented into the scientific literature [14][15][16]; the study uses the method proposed in [6,17]. For this analysis, 200 V voltage stress is studied because of a more pronounced evolution, and a case temperature varying from 50 • C to 150 • C is investigated.…”

Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices

“…Recently, it has been proven that InAlN transistors have good performance for applications in power device applications due to its strong piezoelectric effect at the interface [11]. Meanwhile, the sheet concentration in the channel of 10 13 cm −2 by the difference in spontaneous polarization is larger than the other HEMTs devices based of III-V [12,13].…”