Trapped particle detection in bonded semiconductors using gray-field photoelastic imaging

Horn, Gavin P.; Mackin, Thomas J.; Lesniak, Jon R.

doi:10.1007/bf02427995

Cited by 19 publications

(19 citation statements)

References 23 publications

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“…, [6] where ∆x i is the length of a subinterval (in this case, the distance between nodes in the through thickness direction) and σ 13 (x i * ) is the average shear stress of the endpoints of a given subinterval. The Riemann sum of shear stress is normalized by the plate thickness in order to consistently compare with values measured by the IR-GFP.…”

Section: Resultsmentioning

confidence: 99%

“…No other defect is visible in the IRT image outside of the patterned mesa. The shear stress image shows the expected "bow-tie" pattern from the mesa contact point (4) in the center of the debond region that decays to the noise level with distance from the center of the mesa, followed by a secondary stress concentration near the edge of the debond region. Several other smaller defects are scattered throughout the interface (smaller bow-tie patterns), most likely due to contaminant particles introduced during the contact lithography stage of patterning (again, these smaller defects are not visible in the IRT image).…”

Section: Methodsmentioning

confidence: 97%

See 1 more Smart Citation

Quantitative Model-Based Interpretation of Experimentally Measured Nanoscale Stress Sources at Wafer Bonded Interfaces

Horn

Johnson²,

Mackin

et al. 2006

ECS Trans.

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Nanoscale surface features at the interface of bonded silicon wafers are critical to achieving high yield wafer bonding processes. Interfacial features such as surface patterning, trapped particles and gasses, and wafer surface nanotopography can generate residual stresses that may affect subsequent device lifetimes, processing and performance. This paper presents a numerical model that captures a more complete description of bonding physics and mechanics than extensions of closed form thin-plate solutions. The model is verified by experimentally measuring residual stresses arising from patterned nanoscale surface features using an infrared grey-field polariscope. The proposed numerical model captures the functional form of the observed residual stress fields arising from interfacial defects and is in good agreement with experiments. These simulations indicate that high bond energies may produce debonds around small defects that are not possible to detect using infrared transmission inspection techniques, yet the associated residual stresses are increasingly large in magnitude.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 97%

Quantitative Model-Based Interpretation of Experimentally Measured Nanoscale Stress Sources at Wafer Bonded Interfaces

Horn

Johnson²,

Mackin

et al. 2006

ECS Trans.

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“…Of the different methods the DCB measurement, also referred to as the crack opening method, is frequently Figure 7.13b shows a macroscale defect, where a single particle " a " has generated a noncontacted area, and several other particles are tapped in the bonding interface. The maximum residual stress is present at location " d " [40] .…”

Section: Dryingmentioning

confidence: 98%

“…Trapped particles and mac roscale defects associated with particles can be found by imaging the residual stress-fields around the defects. The residual stress at the particle locations is typically from less than 1 MPa to several MPa [40] .…”

Section: Dryingmentioning

confidence: 99%

Thick-Film SOI Wafers

Mäkinen

2010

Handbook of Silicon Based MEMS Materials and Technologies

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“…In approximately 20 seconds, high contrast images can be obtained that allow detection of defects smaller than those resolved by IRT as long as the defects generate a measurable residual stress signature (11). The IR-GFP illuminates a sample with circularly polarized infrared light and measuring the transmitted light intensity with an infrared camera fitted with a polarizer mounted in a rotating stage.…”

Section: Infrared Polariscopementioning

confidence: 99%

Development of Nonuniform Residual Stresses during Anodic Bonding

et al. 2010

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Nonuniform residual stresses may develop during anodic bonding due to variations in wafer curvature prior to bonding or due to nanotopography interactions between the bonding surfaces. In this work, we discuss the significance of nonuniform residual stress in anodically bonded wafer pairs and present a method for measuring local stress variations even in cases when the bonded wafers are apparently defect free based on conventional inspection tools. These residual stresses can vary significantly between two different wafers processed identically, depending on the local interactions, but they are present in all standard bonding methodologies. In some instances, these local residual stresses can significantly alter the resulting wafer curvature in apparently defect free substrates. Currently, anodically bonded devices or substrate wafers are considered "defect free" if no large debonds are found after bonding; however the residual stress state of the wafers cannot be determined using the same conventional techniques.

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Trapped particle detection in bonded semiconductors using gray-field photoelastic imaging

Cited by 19 publications

References 23 publications

Quantitative Model-Based Interpretation of Experimentally Measured Nanoscale Stress Sources at Wafer Bonded Interfaces

Quantitative Model-Based Interpretation of Experimentally Measured Nanoscale Stress Sources at Wafer Bonded Interfaces

Thick-Film SOI Wafers

Development of Nonuniform Residual Stresses during Anodic Bonding

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