Trapped Electrons in Irradiated Quartz and Silica: I, Optical Absorption

Abstract

Evidence is given for the correlation between an optical absorption band at 2300 a.u. and an electron spin resonance system developed in quartz after 6oCo y-irradiation. The results of bleaching 7-irradiated quartz and silica at 78°K. and at room temperature are presented and discussed. Also, further observations upon annealing these color centers are given.

Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193nm) laser

“…10 well replicates the Al-OHC spectra reported for Al-doped silica glasses [15,25]. The optical band at 4.1 eV also accompanies presence of aluminum irradiated silica glass and quartz [23], whereas the one at 5.5 eV likely belongs to the Si-E' center since a band at 5.4 eV in irradiated a quartz [26] has been correlated with the Si E 0 2 center in quartz [27] and an Si-E 0 -center ESR signal is observed in Fig. 10.…”

Structural changes induced by KrF excimer laser photons inH2-loaded Ge-dopedSiO2Fujimaki1, Kasahara2, Shimoto3 et al. 1999Phys. Rev. B607541View full textAdd to dashboardCite

“…Therefore, the FWHM of 1.2 eV is more reliable for the 5.8-eV band. Although the Si EЈ center is known to have absorption at 5.8-eV, 32,33 there is no possibility of the present 5.8-eV band being due to the Si EЈ center since the ESR signal of the Si EЈ center never appeared. Therefore, the present 5.8-eV band is due to the same origin in both samples N and H, and the origin is the GEC with the Ge͑1͒ ESR signal.…”

Formation and annihilation of intrinsic defects induced by electronic excitation in high-purity crystalline SiO2

“…The impurity species involved in this process may be Al, Li, and Na, whose concentrations ($1-2 Â 10 15 cm À3 ) are comparable to C 0 , and, possibly, SiOH groups, which were undetected, although their detection limit (Շ10 17 cm À3 ) was larger than C 0 . The growth of the weak, non-saturating OA at $6 eV with increasing D may be the result of silicon dangling bonds, 32 which can be formed by the decomposition of SiASi bonds.…”