Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations

Chan, Yi‐Jen; Pavlidis, D.

doi:10.1109/16.285009

Cited by 66 publications

(15 citation statements)

References 14 publications

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“…The LPO-grown oxide can satisfy dangling bonds to improve the surface state between the oxide/InGaP interfaces because oxygen oxidizes the GaAs and is changed into fresh native oxide. A fastrising bulge appearing at approximately 4 × 10 4 Hz is different from the Lorentz-shape spectrum, 18 and improvement of the surface state has been observed with negligible generation-recombination noise (γ = 2) of the MOS-PHEMT without a gate recess at low frequency. This also causes a reduction in the trap concentration, which results in better 1/f noise characteristics.…”

Section: Resultsmentioning

confidence: 97%

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Lee

Chen

2012

ECS Solid State Letters

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This paper demonstrates an enhancement-mode InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (PHEMT) with a liquid-phase oxidized GaAs gate without a gate recess. Without a gate recess, the gate insulator is obtained directly by oxidizing the GaAs capping layer in the LPO growth solution, and fully planar surface is achieved around the active region. The proposed device shows a maximum transconductance of 141 mS/mm at V DS = 2 V and a maximum drain current density of 145 mA/mm at V GS = 2 V and V DS = 2 V. It also exhibits lower leakage current, improved subthreshold swing, suppressed low-frequency noise, and enhanced microwave performance than those of the referenced PHEMT.The advantages of using enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistors (PHEMTs) as power devices for single supply operations have been recognized for some time. These advantages can facilitate circuit design and construction and render them less complex. They can also improve dc power consumption, efficiency, and operation time; 1 this has led to interest in applications for cellular phones. The buried gate approach 2,3 or double recess process 4,5 are commonly used techniques for high-performance E-mode PHEMTs. However, the gate-recess process creates more surface states that induce a gate leakage issue and generate parasitic capacitances that degrade device performance. Moreover, the Schottky barrier heights may still suffer from gate leakage issue. Suitable oxidation or passivation can satisfy dangling bonds, which reduce surface recombination centers and suppress carrier trapping within the surface states. In other words, using an oxide film to form a metaloxide-semiconductor (MOS) structure for metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) fabrication could improve the microwave characteristics and lowfrequency noise associated with the surface state and lattice scattering.Over the past years, a simple and selective liquid phase oxidation (LPO) on GaAs operated at low temperature (30-70 • C) has been proposed and investigated. 6 Previous works have reported the preliminary study of the dc performance, the pulse transient characteristics, 7 and RF performance 8 of the depletion-mode (Dmode) InGaP/InGaAs MOS-PHEMT. The pulse transient measurement shows much less impact of the surface trap effects for the D-mode MOS-PHEMT. However, the literature focuses less on the low-frequency noise and microwave characteristics of the E-mode InGaP/InGaAs MOS-PHEMT. 9 Low-frequency noise measurement is a commonly used method to investigate MOS interface properties of MOS-PHEMTs 10,11 and surface treatment properties of PHEMTs. 12,13 This paper presents a discussion on the low-frequency noise and microwave performance of an E-mode InGaP/InGaAs MOS-PHEMT with an oxidized GaAs gate without a gate recess to further understand the role of the gate insulator. Without a gate recess, the gate insulator is obtained directly by oxidizing the GaAs capping layer...

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Section: Resultsmentioning

confidence: 97%

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Lee

Chen

2012

ECS Solid State Letters

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“…To further investigate the temperature-dependent trap mechanism of the two devices, LFN measurements were performed using a setup based on the voltage-voltage preamplifier architecture, which is suitable for LFN measurement of high-power devices such as GaN HEMTs. [14][15][16][17] The LFN has been suggested to be calculated as the sum of the noise from the channel and the series resistance in the active region. Figure 4(a) displays the S ID =I 2 D noise spectra from frequencies of 10 to 10000 Hz for both devices in 300 and 500 K environments.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement

Chiu

Peng

Wang

et al. 2016

Jpn. J. Appl. Phys.

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The reliability of a InAlN/GaN/Si high electron mobility transistor device was studied using low frequency noise measurements under various stress conditions. By applying the through substrate via (TSV) technology beneath the active region of the device, buffer/transition layer trapping caused by the GaN/Si lattice mismatch was suppressed. In addition, a backside SiO2/Al heat sink material improved thermal stability and eliminated the vertical leakage current of the proposed device. Applying the TSV technology improved the subthreshold swing slope from 260 to 230 mV/dec, owing to the stronger channel modulation ability and reduced leakage current of the device. The latticed-matched InAlN/GaN heterostructure had a stable performance after high current operation stress. The suppression of buffer/transition layer traps of the TSV device is a dominant factor in device reliability after long-term high-electric-field stress.

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“…By comprehensive comparing and compromise considering all parameters, it can be determined that the treatments of UV/Ozone and TMAH are the more appropriate method to improve the surface of gate recess of InAlAs/InGaAs InP based HEMTs than the only UV treatment and the no UV treatment. It has been known that the low frequency (LF) noise is attributed to traps in the bulk, on the surface or at the interface of the semiconductor materials [28]. The fluctuation in the surface recombination would lead to the fluctuation in the gate leakage current.…”

Section: Rf Characteristicsmentioning

confidence: 99%

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

Tong

Ding

et al. 2020

IEEE J. Electron Devices Soc.

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in this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of nonstoichiometric surface of InP etch stopper layer was found to be the result of donor-like surface defects brought by HF damage, bringing troubles like kink effect, high gate leakage current and deteriorated noise performance. Through the method of surface treatments, the InAlAs/InGaAs InP-based HEMTs exhibit excellent DC performances, demonstrating a low gate leakage currents of 10^-8 A/um, a peak transconductance of 1100mS/mm, an improved subthreshold swing of 92.5mV/decade at Vds = 1.0V, and a positive threshold voltage shift of Vth = 300 mV. The ft of 260GHz and fmax of 440GHz were hardly influenced by the surface treatments while the noise performances were improved obviously. Two orders of magnitude smaller input noise spectral density shows the method of surface treatment can effectively reduce the surface defects and significantly improve the surface of gate recess of InAlAs/InGaAs InP-based HEMTs.

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Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations

Cited by 66 publications

References 14 publications

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

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