Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions

Qiang, Lei; Liu, Wuguang; Pei, Yanli; Wang, Gang; Yao, Ruohe

doi:10.1016/j.sse.2016.11.010

Cited by 33 publications

(16 citation statements)

References 43 publications

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“…Generally, the mobility increased with V g and reached the maximum value; in IZO TFTs, the mobility slightly decreased after the maximum. These characteristics are in good accordance with the percolation model, in which the heights of random potential barriers are lowered for carrier transport to form faster path when the Fermi‐level is raised by the gate‐field . The slight decrease in IZO TFTs at the large gate field is probably due to the surface or Columbic scattering at a high carrier concentration .…”

Section: Device Performancesupporting

confidence: 81%

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Zheng

et al. 2017

Adv Materials Inter

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Precise patterning of solution‐processed oxide semiconductors is critical for cost‐effective, large‐scale, and high throughput fabrication of circuits and display application. In this paper, demonstration and comparison are made using the additive and subtractive patterning strategies to precisely fabricate wafer‐scale thin film transistor arrays (1600 devices), which are based on high‐quality solution‐processed indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO). The IZO and IGZO TFTs exhibit field‐effect mobility up to 8.0 and 5.2 cm2 V−1 s−1 when using the additive method, whereas the highest mobility of 24.2 and 13.7 cm2 V−1 s−1 for IZO and IGZO TFTs is achieved when using the subtractive method. The X‐ray photoelectronic spectroscopy studies and quantitative 2D device simulations together reveal that good device performance is attributed to moderate shallow donor‐like states (providing electrons) from oxygen vacancy and few accepter‐like states (trapping electrons) resulted from the dense structural framework of MO bonds. After examining the uniformity and reliability of the devices, the solution‐patterned inverters are demonstrated using negative‐channel metal oxide semiconductors, which show full swing output transfer characteristics and thus provide a promising method for solution‐based fabrications of circuits.

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Section: Device Performancesupporting

confidence: 81%

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Zheng

et al. 2017

Adv Materials Inter

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“…In addition, contrary to the pristine TFT, the depletion region formed near the back-channel surface in the Al-capped SnO TFT forces the holes to move closer to the SiO 2 /SnO interface, which can degrade the μ FE value of the SnO TFTs because of the increased surface roughness scattering.Another possible mechanism for the decrease of the μ FE value in the Al-capped SnO TFT is the lowered percolation conduction probability caused by the decreased hole concentration inside the SnO channel. Previous studies reported that the randomly distributed Sn 2+ ions generate an energy distribution barrier near the VBM, and the percolation conduction has been considered one of the dominant carrier transport mechanisms in SnO TFTs [ 41 ].…”

Section: Resultsmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

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“…Transparent complementary metal oxide semiconductor (CMOS) circuits are an essential element to drive the microelectronics revolution. Their advantages over n‐channel MOS (NMOS), such as low power dissipation and higher density of logic functions on a chip, can be realized if both high performance n‐ and p‐type oxide thin‐film transistors (TFTs) can be developed . Therefore, the achievement of high performance n‐ and p‐type oxide semiconductors (OSs) is an important issue for the development of giant microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Effects of Oxygen Ratio on the Properties of Tin Oxide Thin Films Doped with Bismuth

Bang

Seo

Bae

et al. 2019

Physica Status Solidi (a)

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This study examins the effects of the oxygen ratio on the properties of bismuth (Bi)‐doped tin oxide (Bi‐SnOx) films deposited by radio frequency magnetron sputtering using a SnO (90 at%)‐Bi (10 at%) ceramic target. The properties of the samples are characterized by X‐ray photoelectron spectroscopy (XPS), Hall effect measurements, dynamic‐secondary ion mass spectrometry (D‐SIMS), and X‐ray diffraction (XRD). The samples deposited without oxygen gas exhibit Sn4+ and Sn2+ XPS peak areas of 44.7 and 41.1%, respectively. The Sn4+ area increases to 64.1% with increasing oxygen ratio up to 20% with a concomitant decrease of the Sn2+ area to 26%, indicating that SnO2 with n‐type conductivity is the dominant phase under a higher oxygen partial pressure. XPS shows that with increasing oxygen ratio, the chemical state of Bi changes from metallic Bi (Bi0) to Bi3+. Furthermore, with increasing oxygen ratio, the Bi content in the samples increases because of the increase in Bi2O3 formation, which causes a decrease in the number of oxygen vacancies in the samples. These results suggest that the oxygen ratio is useful for controlling Bi doping in SnOx films. Therefore, Bi doping is valuable for suppressing the formation of oxygen vacancies and improving the properties of SnOx films.

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Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions

Cited by 33 publications

References 43 publications

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Effects of Oxygen Ratio on the Properties of Tin Oxide Thin Films Doped with Bismuth

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