Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Shin, Mingyu; Bae, Kang-Hwan; Jeong, Hwan-Seok; Kim, Dae-Hwan; Cha, Hyun-Seok; Kwon, Hyuck‐In

doi:10.3390/mi11100917

Cited by 8 publications

(3 citation statements)

References 48 publications

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“…The most plausible reason for the variation of electron mobility is the change in back channel potential caused by the difference in work function between the IGZO and the metallic capping layer. [ 59,60 ] Figure S15 (Supporting Information) shows a schematic band structure representation of dielectric–semiconductor and dielectric–semiconductor–metal multilayers supporting, qualitatively, the mechanism underlying the observed performance variation between pristine and metal‐covered IGZO TFTs. Thus, when the metal is Al ( Figure a), electrons can be transferred from the low work function Al to the high work function IGZO layer, resulting in a positive potential in the IGZO.…”

Section: Resultsmentioning

confidence: 68%

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

et al. 2022

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versus conventional amorphous silicon TFTs, as well as large area processability at low temperatures. [13][14][15][16] Furthermore, MOTFTs are less affected by short channel effects. [17][18][19] As in other transistor technologies, MOTFT performance strongly depends on the intrinsic semiconductor channel properties as well as the channel interfacial characteristics, including that of the top surface. [20][21][22] Furthermore, MOTFTs are limited by uncontrollable back channel trap densities, restricting their application in high-resolution displays, as well as 3D and virtual reality devices. [7,[23][24][25][26][27] Recently, several strategies were reported to enhance the performance of MOTFTs by adopting new device architectures, including dual gate implantation, [28][29][30] high-k insulators, [31][32][33] and semiconducting heterostructures. [34][35][36][37][38] Among these strategies, low-dimensional bi-or multilayer heterostructures of different MOs have enhanced the carrier mobility and drive current in MOTFTs. [39,40] These improvements typically originate from confined free electrons within the potential well of the heterointerface between two semiconductors having large Fermi energy differences. [41] However, although these approaches are noteworthy, limitations in available component materials and control of leakage currents have compromised the fidelity of this platform. [37,38] Another approach to enhance performance Thin-film transistors using metal oxide semiconductors are essential in many unconventional electronic devices. Nevertheless, further advances will be necessary to broaden their technological appeal. Here, a new strategy is reported to achieve high-performance solution-processed metal oxide thin-film transistors (MOTFTs) by introducing a metallic micro-island array (M-MIA) on top of the MO back channel, where the MO is a-IGZO (amorphous indium-gallium-zinc-oxide). Here Al-MIAs are fabricated using honeycomb cinnamate cellulose films, created by a scalable breath-figure method, as a shadow mask. For IGZO TFTs, the electron mobility (µ e ) increases from ≈3.6 cm 2 V −1 s −1 to near 15.6 cm 2 V −1 s −1 for optimal Al-MIA dimension/ coverage of 1.25 µm/51%. The Al-MIA IGZO TFT performance is superior to that of controls using compact/planar Al layers (Al-PL TFTs) and Au-MIAs with the same channel coverage. Kelvin probe force microscopy and technology computer-aided design simulations reveal that charge transfer occurs between the Al and the IGZO channel which is optimized for specific Al-MIA dimensions/surface channel coverages. Furthermore, such Al-MIA IGZO TFTs with a high-k fluoride-doped alumina dielectric exhibit a maximum µ e of >50.2 cm 2 V −1 s −1 . This is the first demonstration of a micro-structured MO semiconductor heterojunction with submicrometer resolution metallic arrays for enhanced transistor performance and broad applicability to other devices.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202205871.

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Section: Resultsmentioning

confidence: 68%

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

et al. 2022

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“…For the p-channel FBFETs, the shift in V TH under the gate bias stresses is consistent with that for other pchannel FETs. Nevertheless, considering that other p-channel FETs are highly vulnerable to NBS [20][21][22], the electrical characteristics of p-channel FBFETs are relatively reliable even under NBS. In addition, the degradation mechanisms of the FBFETs and conventional FETs are different since these FETs have their different operation mechanisms although the shift of V TH of the FBFETs under PBS and NBS is consistent with that of conventional FETs.…”

Section: Resultsmentioning

confidence: 99%

Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

Son

Cho

Kim³

2021

IEEE Access

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In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (SS) of 0.12 mV/dec, an on-current of ~10 -4 A, and a threshold voltage (V TH ) of -0.76 V. There is a negligible change in the on-current and SS when the FBFETs are stressed by a gate-bias voltage corresponding to an electric field of 5.4 MV/cm across the gate oxide. On the other hand, as the duration of the stress increases to 1000 s, the V TH shifts to -0.89 V and -0.67 V for NBS and PBS, respectively. The V TH was recovered to over 83% at a recovery bias voltage of 5 V. The electrical stabilities of FBFETs under NBS and PBS are discussed in this study.

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“…In this case, I ph is suppressed because the space available for carrier generation is limited and the channel resistance is high. [19][20][21] Reducing the carrier concentration (n) in the channel layer of TFT based UVPDs, or using a Schottky metals (e.g., Pt, 22,23) Au, 24) and Ni 25) ), or p-type MOSs (e.g., NiO, [26][27][28] MgO, 29) and Cr 2 O 3 30) ) as a capping layer (CL) on the channel surface (i.e. the back channel) have been demonstrated to mitigate the trade-off between I dark and I ph .…”

Section: Introductionmentioning

confidence: 99%

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Ko,

Wang,

Chen

et al. 2024

Jpn. J. Appl. Phys.

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To improve the photodetection performance of thin-film transistor (TFT)-based ultraviolet photodetectors (UVPDs), using thick channel layers to promote photocurrent (Iph) or using thin channel layers to suppress dark current (Idark) is a typical trade-off. In this work, UVPDs based on oxygen-doped Si-Zn-Sn-O (SZTO) TFT with a stack of Pt/NiO capping layers (CLs) to release the trade-off between Idark and Iph are demonstrated. The Pt CL creates a wide depletion region in the channel layer to allow the use of thick channels, but still maintains low Idark, while the NiO CL forms a pn heterojunction to provide additional photogenerated carriers and enhance Iph under UV irradiation. Experimental results show that the proposed 95-nm-thick oxygen-doped SZTO TFT with a stack Pt/NiO dual CLs exhibits excellent photoresponsivity of 2026 A/W and photosensitivity of 9.3×107 A/A, which are about 76× and 82.5× higher than the conventional 45-nm-thick SZTO TFT under 275 nm UV irradiation.

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Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Cited by 8 publications

References 48 publications

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

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