Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

Villard, Frederic; Prigent, J.P.; Morvan, E.; Dua, C.; Brylinski, C.; Temçamani, Farid; Pouvil, P.

doi:10.1109/tmtt.2003.809678

Cited by 17 publications

(4 citation statements)

References 14 publications

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“…In hall measurement, HPSI substrates also showed better mobility than V-doped substrates. Mobility of HPSI substrates was 113 cm 2 /V-s and that of the V-doped SI substrates was 66.9 cm 2 /V-s. SiC MESFETs have been reported to suffer from instabilities in drain current due to charge trapping [7]. This phenomenon is very detrimental to RF performance because it decreases the transistor available power and device linearity.…”

Section: Resultsmentioning

confidence: 99%

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Yim

Song

Moon

et al. 2007

MSF

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Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 μm and a gate width of 100 μm was 430 mA/mm, and the transconductance was 25 mS/mm. The maximum oscillation frequency and cut-off frequency were 26.4 GHz and 7.2 GHz, respectively. The power gain was 8.4 dB and the maximum output power density was 2.8 W/mm for operation of class A at CW 2 GHz. MESFETs on HPSI substrates showed no current instability and much higher output power density in comparison to MESFETs on vanadium-doped SI substrates.

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Section: Resultsmentioning

confidence: 99%

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Yim

Song

Moon

et al. 2007

MSF

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“…Silicon carbide (SiC)-based metal-semiconductor field effect transistors (MESFETs) are one of the most promising technologies for high-power, high-frequency and hightemperature applications in the commercial and military communications [1][2][3][4]. This is mainly due to the wide band gap (3.26 eV), high breakdown field (3 MV cm −1 ), large thermal conductivity (4.9 W cm −1 K −1 ) and high electron saturation velocity (2 × 10 7 cm s −1 ).…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional analysis of the gate–source distance scaling effects in 4H-SiC MESFETs

Deng¹,

Zhang²,

Li³

2008

Semicond. Sci. Technol.

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Two-dimensional dc and small-signal ac analyses of the gate-source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of the gate-source distance can improve device performance, enhancing drain current, transconductance and maximum oscillation frequency. This influence is associated with the dynamic characteristic of electrons in SiC MESFETs, which leads to a linear velocity regime in the source access region, even for high drain voltages. The variations of gate-to-source capacitance, gate-to-drain capacitance, cut-off frequency and maximum oscillation frequency with respect to the change in gate-source length have also been studied in detail. The obtained results can be used for a design guideline for the layout of 4H-SiC MESFETs.

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“…The ideal thermal conductivity of 4H-SiC is 4.9 W/cm.K at 300 K, which causes the device performances of 4H-SiC MESFET to be less influenced by the self-heating effect than those of Si-and GaAs-based devices under the same power dissipation. [7−9] However, as investigated before, [7,10] the self-heating effect is still one of the crucial issues in 4H-SiC MESFETs.…”

Section: Introductionmentioning

confidence: 99%

A new physics-based self-heating effect model for 4H-SiC MESFETs

Cao¹,

Zhang²,

Zhang³

2008

Chinese Phys. B

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A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I – V curves with the self-heating effect is obtained.

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Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

Cited by 17 publications

References 14 publications

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Two-dimensional analysis of the gate–source distance scaling effects in 4H-SiC MESFETs

A new physics-based self-heating effect model for 4H-SiC MESFETs

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