Trap effects studies in GaN MESFETs by pulsed measurements

Trassaert, S.; Boudart, B.; Gaquière, Christophe; Théron, D.; Crosnier, Y.; Huet, François; Poisson, M.A.

doi:10.1049/el:19990887

Cited by 77 publications

(38 citation statements)

References 5 publications

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“…A similar conclusion was determined for AlGaAs/GaAs modulation-doped FETs 10 over a decade ago. Recently, Trassaert et al 4 have observed the effects of surface states in their GaN MESFETs. This conclusion was based on the lack of any difference in threshold voltage between static and pulsed measurement conditions.…”

Section: Discussionmentioning

confidence: 99%

“…While attainable device characteristics continue to improve, the reproducibility of these characteristics has become problematic, 3 due to device limitations resulting from trapping effects. 3,4 In addition to compensating intentionally doped material, such traps can produce persistent photoconductivity ͑PPC͒ effects and current collapse. Current collapse refers to the trapping of charge at defects, after the application of a high drain-source voltage, which results in a significant reduction in the drain current.…”

Section: Introductionmentioning

confidence: 99%

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Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

Klein¹,

Binari²,

Freitas³

et al. 2000

Journal of Applied Physics

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Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor ͑MESFET͒ have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model. The two traps were found to have very different photoionization cross-sections but comparable concentrations (4ϫ10 11 cm Ϫ2 and 6ϫ10 11 cm Ϫ2 ͒, suggesting that both traps contribute comparably to the observed current collapse. ͓S0021-8979͑00͒00417-5͔

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

Klein¹,

Binari²,

Freitas³

et al. 2000

Journal of Applied Physics

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“…The nonlinear currents are evaluated using first-order port voltages due to individual tones and p, coefficients of nonlinear elements [14]. With Y matrix evaluated at mixing frequencies, the second-order port voltages are given by, Results and Discussion Fig.2 shows calculated DC and pulsed I-V characteristics incorporating thermal and trapping effects for a 0.3/ 4 n x 100#m GaN MESFET [10]. Experimental results are plotted on the same figure to show good agreement [10].…”

Section: Discussionmentioning

confidence: 99%

“…With Y matrix evaluated at mixing frequencies, the second-order port voltages are given by, Results and Discussion Fig.2 shows calculated DC and pulsed I-V characteristics incorporating thermal and trapping effects for a 0.3/ 4 n x 100#m GaN MESFET [10]. Experimental results are plotted on the same figure to show good agreement [10]. The MESFET structure was grown on sapphire with a 2000 A n-GaN active layer with doping concentration of 2.7 x 1017 cm 3 [10].…”

Section: Discussionmentioning

confidence: 99%

“…Besides, GaN based devices are plagued by traps that results in performance deteriorating gate-and drain-lag transients and current collapse in the I-V characteristics [10,11]. Trapping effects are dependent upon the applied signal frequency and their effect is more pronounced for frequencies less than the transconductance and output resistance dispersion frequencies [12,13].…”

Section: Ps-2mentioning

confidence: 99%

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Thermal and trapping effects in GaN-based MESFETs

Islam

Anwar

Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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RF power performances of GaN-MESFETs are reported using a physics-based model that incorporates dispersion in the output resistance and transconductance due to traps and thermal effects. Calculated I-V characteristics are in excellent agreement with the measured results. Taking thermal effects into account the maximum output power of a 0.3gan x 100arn GaN MESFET is 22dBm at a power gain of 4.2dB at 4GHz. The corresponding quantities are 27dBm and 6.4dB, respectively if a constant channel temperature of 300K is assumed. At elevated temperatures compression in output power, gain and PAE is less in MESFETs with longer gate lengths.

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Field Effect Transistors and Heterojunction Bipolar Transistors

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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Trap effects studies in GaN MESFETs by pulsed measurements

Cited by 77 publications

References 5 publications

Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

Thermal and trapping effects in GaN-based MESFETs

Field Effect Transistors and Heterojunction Bipolar Transistors

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