Trap distribution in ZnIn₂S₄from photoconductivity analysis

Abstract

Photoconductivity, quenching, thermally stimulated current and decay characteristics are studied in ZnIn2S4 single crystals. Evidence is obtained for the presence of three impurity levels taking part in the photoconductivity process. Optical quenching is attributed to a sensitization centre, which acts as a competitive recombination level. An exponential distribution of electron traps is revealed both by pulsed photoconductivity and by thermocurrent analysis. The two experimental techniques accordingly provide the value of 70 meV/decade for the trap distribution. Some aspects of the nature of the impurity centres are examined.

Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

“…With regard to the synthesized layer using the x = 0.4, the value of the forbidden band is 2.8 eV. This value is in the same range with the one found by Serpi [6] in a photoconductivity study of thin layers of the same ternary compound.…”

Deep Traps Distribution in TlInS2Layered Crystals

“…The spectra decreased in intensity and shifted towards higher temperatures with increasing the light excitation temperature. This shift supports the validity of a quasi-continuous trap distribution [27][28][29][30]. Each TSC spectra obtained at different excitation temperatures can be described by the following expression [27]:…”

“…By assuming an exponential traps distribution, whose density at energy E t will be given by N = A 1 exp(−αE t ), we can write for the traps filled at the excitation temperature T 0 the following expression [27]:…”

Mobility activation in thermally deposited CdSe thin films

“…Native defects such as various traps having energy in the range 0⋅15-0⋅8 eV (Kindleysides and Woods 1970;Kalita et al 1999) can cause considerable change in the electrical and optical properties of semiconductor thin films. These defects characterize the electronic properties of the materials, because they give rise to charge centre acting as donors and acceptors (Serpi 1976). In view of the lack of information concerning the effect of illumination on trapping spectrum in thermally evaporated CdSe thin films, in this paper an assessment has been made regarding the influence of illumination on mobility activation process as well as on the evaluation of trap depths at different ambient conditions.…”