Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

Abstract

Well-defined metal-insulator-metal trilayered structures composed of epitaxial Pr0.7Ca0.3MnO3 insulator layers, epitaxial LaNiO3 bottom electrodes, and Al metal top electrodes were fabricated on LaAlO3 (100) substrates. The I-V characteristics of the trilayer structures show electric-field-induced resistance switching. The resistance switching ratio of the heterostructures was up to 100 when positive and negative pulsed voltages were applied. Detailed I-V analysis indicates the importance of both trap-controlled space-charge-limited current and Poole–Frenkel effect in resistance switching at Al∕Pr0.7Ca0.3MnO3 interfaces.

Ultrathin undoped tetrahedral amorphous carbon films: The role of the underlying titanium layer on the electronic structure

“…14 typical for oxide and nitride layers [55]. Thus, in the case of sample with the air-formed titanium oxide interlayer, the trap energy values and other characteristics presented in Table 2 are most likely correlated with the properties of the oxide interlayer, but not with the ta-C bonding structure, because they are found from the current-voltage curve J SR -U SR region corresponded to the oxide interlayer.…”

“…An N value around 4 is typical not only for nitride layers, but also for oxides [55]. The numbers placed along the lines of approximations present the slopes at those locations.…”

New electrochemically improved tetrahedral amorphous carbon films for biological applications

“…However, it is caused by two different trap mechanisms, which are either monoenergetic traps present in IMP-ta-C or by exponentially distributed ones in REF-ta-C. In addition, the slope values between 4 to 6 are typical to the oxide layers [27,28] which indirectly proof that Ti layer deposited via cathodic arc deposition contains more oxygen and influence on conduction mechanism through ta-C layer.…”

Bipolar resistance switching property of Al-Ag/La0.7Ca0.3MnO3/Pt sandwiches

“…7), 17) These results indicate that the electron transport is carried by Ag in the Al-33%Ag electrode and the increase in the original resistance is induced by Al in it. So, this I-V characteristic can also be explained by carrier injected space charge limited conduction controlled by interface trapping/detrapping.…”

“…3),4) On the other hand, when an easily oxidized metal like Ti or Al is used, the switching speed is quite slow, on the order of 1 ms. 12), 17) In our recent research, Al-50%Ag alloy TE has been developed to realize the resistance switching of a noncrystalline and low-resistance LCMO thin film, 18) and positive EPIR has been found in Al-50%Ag/LCMO/ Pt structure. Meanwhile, under the applied pulses of ±10 V magnitude and as long as 10 μs duration, the average ratio of resistance change (RHRS-RLRS)/RLRS × 100% is around 120%, which can meet the need of practical applications for RRAM.…”