2015
DOI: 10.1016/j.diamond.2015.06.009
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Ultrathin undoped tetrahedral amorphous carbon films: The role of the underlying titanium layer on the electronic structure

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Cited by 20 publications
(19 citation statements)
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“…The influence of this geometric asymmetries can be seen in the difference in the energy position of the QB states, their energy width, and localization degree. Although the localized states at each side of the barrier are not at the same energy (due to the wells' asymmetry), there is a considerable tail overlapping that is responsible for the resonance in T(E), thus, evidencing RT transport as reported by Bhattacharyya et al 1,12 Our results can also be contrasted with the experimental results from Protopopova et al 61 They studied the thickness dependence of the conductivity in a-C ultra-thin films, and proposed that for thinner films ( 4 nm) the conduction decreases due to the filling of exponentially distributed traps. On the contrary, we propose that conduction in high-density ultra-thin films decreases due to the reduction in the number of charge traps (localized electronic states) induced by the atomic reconfiguration.…”
Section: Fig 10 Pdos On Spcontrasting
confidence: 57%
“…The influence of this geometric asymmetries can be seen in the difference in the energy position of the QB states, their energy width, and localization degree. Although the localized states at each side of the barrier are not at the same energy (due to the wells' asymmetry), there is a considerable tail overlapping that is responsible for the resonance in T(E), thus, evidencing RT transport as reported by Bhattacharyya et al 1,12 Our results can also be contrasted with the experimental results from Protopopova et al 61 They studied the thickness dependence of the conductivity in a-C ultra-thin films, and proposed that for thinner films ( 4 nm) the conduction decreases due to the filling of exponentially distributed traps. On the contrary, we propose that conduction in high-density ultra-thin films decreases due to the reduction in the number of charge traps (localized electronic states) induced by the atomic reconfiguration.…”
Section: Fig 10 Pdos On Spcontrasting
confidence: 57%
“…The electronic properties of ta-C depend strongly on the film thickness because it affects the fraction of sp 2 and sp 3 bonded carbon. [78,79] We observed in publication III, that the fraction of sp 2 increases with decreasing ta-C film thickness from 100 to 7 nm. This correlated with a decrease in mobility gap and an increase in the current flow through the films.…”
Section: Electrical Propertiesmentioning
confidence: 83%
“…The reference sample was a planar silicon wafer coated with ta-C. The filtered cathodic vacuum arc (FCVA) deposited ta-C films are typically ultrasmooth [44] and atomic force microscope (AFM) measurements have shown that ta-C films deposited with the same equipment produces coatings with root mean square (RMS) surface roughness of 0.1–0.2 nm [23] and this coating copies the roughness of underlying substrate in few nm roughness range [24].…”
Section: Resultsmentioning
confidence: 99%
“…DLC is not a specific single material, but a group of amorphous carbonaceous materials with different atomic bond structures and properties. Among DLC materials, tetrahedral amorphous carbon (ta-C) is a form with high sp 3 bonding and low hydrogen content, and it is considered the hardest and most wear resistant [21], but it also possesses beneficial properties for sensor material: it is electrochemically active [13,15,22], it has a wide water window [23], it is transparent, and its deposition is possible at low temperatures [24].…”
Section: Introductionmentioning
confidence: 99%