“…By using the values of parameters thus obtained, we can estimate the extent of leakage current. the currentvoltage characteristics of leakage path over threshold are expressed as follows ~~= l ' -l R , (6) where ur; is a saturated junction voltage after oscillation.…”
A proposal of a method for analysing the leakage characteristics of 1.3 pm semiconductor buried heterostructure lasers ltsuo Umebu Fujitsu Laboratories Lid, io-i iviorinosato-'wakamiya. Aisugi 24.3-01, japan
“…By using the values of parameters thus obtained, we can estimate the extent of leakage current. the currentvoltage characteristics of leakage path over threshold are expressed as follows ~~= l ' -l R , (6) where ur; is a saturated junction voltage after oscillation.…”
A proposal of a method for analysing the leakage characteristics of 1.3 pm semiconductor buried heterostructure lasers ltsuo Umebu Fujitsu Laboratories Lid, io-i iviorinosato-'wakamiya. Aisugi 24.3-01, japan
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