Growth and characterization of InGaAsP lattice-matched to InP

Houston, P.A.

doi:10.1007/bf00540299

Cited by 23 publications

(3 citation statements)

References 138 publications

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“…͑19͒, is in excellent agreement to experimental data with only a maximum deviation of 2 meV from the LM formula. It can be seen that although the fundamental estimation overestimates the quaternary bowing, 1,19,20 it still approaches the experimental data better than the weighted-sum method ignoring surface bowing. 1 Similar to the discussion in Sec.…”

Section: ͑12͒mentioning

confidence: 90%

Interpolation of quaternary III-V alloy parameters with surface bowing estimations

Mei

2007

Journal of Applied Physics

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Articles you may be interested inOptical method of estimation of degree of atomic ordering within quaternary semiconductor alloys J. Appl. Phys. 112, 023102 (2012); 10.1063/1.4737574 Accurate ab initio predictions of III-V direct-indirect band gap crossovers Appl. Phys. Lett. 97, 091902 (2010); 10.1063/1.3485297 Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experimentsWe present the weighted-sum expression of quaternary parameter estimations via balancing surface bowing estimation errors. Expressions have been derived for both quaternary alloys A x B y C z D and A x B 1−x C y D 1−y and applied to the band gaps of AlGaInAs, AlGaInP, InAsPSb, GaInAsP, and GaInAsSb. Approximation can be improved by fitting known data of quaternary alloys and maximum deviations are less than 20 meV with respect to the lattice-matched polynomial expressions.

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Section: ͑12͒mentioning

confidence: 90%

Interpolation of quaternary III-V alloy parameters with surface bowing estimations

Mei

2007

Journal of Applied Physics

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“…With a(x, y) represents the lattice parameter of the material In 1−x Ga x As y P 1−y , and a(InP) indicates the lattice parameter of the InP substrate. In the absence of a mismatch, we consider y ≈ 2.2x (Vurgaftman et al 2001;Houston 1981). Equation 4becomes a single dimension:…”

Section: Lattice Parameters Of Quaternary Materials In 1−x Ga X As Y Pmentioning

confidence: 99%

“…Physical properties of the InGaAsP alloys such as the lattice parameter and the energy gap can be changed by modifying many control parameters such as chemical composition ratio x and y (Vurgaftman et al 2001), temperature and even pressure (Degheidy and Elkenany 2015). The alloy prepared on the InP substrate covers a range of energies gap ranging from 0.75 to 1.35 eV , whilst, it takes values between 1.42 and 1.9 eV when it prepared on GaAs substrate (Houston 1981).…”

Section: Introductionmentioning

confidence: 99%

Theoretical diagnostic and prediction of physical properties of quaternary InGaAsP compound using artificial neural networks optimized by the Levenberg Maquardt algorithm

Tarbi¹,

Atmani²,

Sellam

et al. 2018

Opt Quant Electron

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The quaternaries In 1−x Ga x As y P 1−y are the main promising elements for the fabrication of optoelectronic devices. The adjustment of their physical parameters is assumed by the change of the molar fraction x and y. These parameters can be affected by the variation of temperature and pressure. To make the theoretical diagnosis of these materials, it is fundamental to know the energy gap ' E g ' and the lattice parameter ' a ', over a wide range of chemical compositions 0 ≤ x ≤ 0.47 and 0 ≤ y ≤ 1 , at different temperatures and pressures. We show that by using the Artificial Neural Network method optimized by the Levenberg Maquardt algorithm ANN-LM, it is possible to obtain results very close to the experiment. The scatter plot and error calculation show that the ANN-LM model provides more accurate values of the lattice parameter than those calculated by Vegard's law. On the other hand, the energy gap values Eg(x, y, T) estimated, using the ANN-LM model, proved to be close to the experimental values that those calculated by the empirical equations. In addition, the ANN-LM method allowed us to estimate with great accuracy the values of the energy gap at different temperatures and pressures Eg(P, T). Our work provides crucial information on the physical properties of the quaternary without the use of approximations, and without taking into account the hypothesis of a perfect agreement between InGaAsP and InP substrate.

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Lattice matched heterolayers

Lendvay

1983

Defect Complexes in Semiconductor Structures

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Growth and characterization of InGaAsP lattice-matched to InP

Cited by 23 publications

References 138 publications

Interpolation of quaternary III-V alloy parameters with surface bowing estimations

Interpolation of quaternary III-V alloy parameters with surface bowing estimations

Theoretical diagnostic and prediction of physical properties of quaternary InGaAsP compound using artificial neural networks optimized by the Levenberg Maquardt algorithm

Lattice matched heterolayers

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