Transport study of graphene adsorbed with indium adatoms

Jia, Zhenzhao; Yan, Biao; Niu, Jingjing; Han, Qi; Zhu, Rui; Yu, Dapeng; Wu, Xiaosong

doi:10.1103/physrevb.91.085411

Cited by 56 publications

(59 citation statements)

References 54 publications

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“…No clear-cut evidence for spin-orbit effects is apparent in our data. We note that similar conclusions have been reached in the work of Jia et al 36 .…”

Section: Discussionsupporting

confidence: 92%

Transport in indium-decorated graphene

2015

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The electronic transport properties of single layer graphene having a dilute coating of indium adatoms has been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In doping. The low field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.

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“…No clear-cut evidence for spin-orbit effects is apparent in our data. We note that similar conclusions have been reached in the work of Jia et al 36 .…”

Section: Discussionsupporting

confidence: 92%

Transport in indium-decorated graphene

2015

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“…1(f). After the Bi-cluster deposition, the carrier mobility was reduced because the clusters contributed scattering centers, as reported in previous experiments [22][23][24]. The transport parameters of the graphene before and after the Bi-cluster deposition are detailed in Table 1.…”

Section: Resultsmentioning

confidence: 54%

Weak localization of bismuth cluster-decorated graphene and its spin–orbit interaction

Gao

et al. 2017

Front. Phys.

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Weak-localization (WL) measurements were performed in a Bi cluster-decorated graphene sheet. The charge concentration was kept constant, and the amplitude of the conductance correction was suppressed after the Bi-cluster deposition. Detailed WL data were obtained while the gate and temperature were changed. Using E. McCann's formula, the spin-relaxation time was extracted, which was found to increase with the elastic scattering time. This is attributed to the Elliott-Yafet spin relaxation and Kane-Mele type spin-orbit coupling (SOC). The SOC strength was enhanced to 2.64 meV as a result of the first deposition. The coverage effect is discussed according to the measurement after the second deposition.

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“…[1][2][3][4][5] However, charge impurities universally exist in graphene and influence its electronic properties. [6][7][8][9][10] A particular case is when approaching the Dirac point at which, because of the vanishing density of states, the transport properties of graphene are expected to be highly sensitive to 3 scattering from charged impurities. [6][7][8][9][10] Previous studies of charge carrier scattering in graphene are mainly achieved with the scattering centers introduced by physical methods, such as ion irradiation, 7, 8 adsorption of adlayers, 9 low temperature deposition 10 and spin coating [11][12][13] of nanoparticles, and atomic hydrogen adsorption.…”

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confidence: 99%

Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Lin

Rui

et al. 2017

ACS Nano

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Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on 2 electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices. KEYWORDS: graphene, charge transport, intervalley scattering, graphitic nitrogen doping, atomically sharp scattering center Graphene, a honeycomb lattice of single layer carbon atoms with a Dirac-like energy dispersion, has attracted extensive interests in recent years owing to its extraordinary charge transport properties and potential applications in electronic devices. [1][2][3][4][5] However, charge impurities universally exist in graphene and influence its electronic properties. [6][7][8][9][10] A particular case is when approaching the Dirac point at which, because of the vanishing density of states, the transport properties of graphene are expected to be highly sensitive to 3 scattering from charged impurities. [6][7][8][9][10] Previous studies of charge carrier scattering in graphene are mainly achieved with the scattering centers introduced by physical methods, such as ion irradiation, 7, 8 adsorption of adlayers, 9 low temperature deposition 10 and spin coating [11][12][13] of nanoparticles, and atomic hydrogen adsorption. 14 These methods could inevitably induce randomness and disorder in graphene and thereby largely degrade its transport properties. Compared with the physical methods, chemical doping has the advantage to achieve scattering centers in graphene with good replicability, lattice stability, and tunablity of doping concentration through the substitution of carbon atoms in the graphene lattice by dopant atoms. Among numerous dopants, nitrogen (N) atoms can be chemically incorporated into graphene forming covalent bonds with carbon (...

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Transport study of graphene adsorbed with indium adatoms

Cited by 56 publications

References 54 publications

Transport in indium-decorated graphene

Transport in indium-decorated graphene

Weak localization of bismuth cluster-decorated graphene and its spin–orbit interaction

Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

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