Weak localization of bismuth cluster-decorated graphene and its spin–orbit interaction

Ge, Jianlei; Wu, Tianru; Gao, Ming; Bai, Zhanbin; Cao, Lu; Wang, Xuefeng; Qin, Yuyuan; Song, Fengqi

doi:10.1007/s11467-017-0677-7

Cited by 18 publications

(17 citation statements)

References 43 publications

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“…The wide distribution of response times in Bi-NWA-graphene is intriguing. A very The Bi/graphene interface is the subject of intense current research [70,71]. Recently, L. Jin et al [71] studied a Bi nanowires/graphene heterostructure that features wrinkles in the graphene and reports giant optical absorption and in-graphene current generation.…”

Section: Resultsmentioning

confidence: 99%

Charge Transfer and Photocurrent in Interfacial Junctions between Bismuth and Graphene

et al. 2018

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Graphene, the two dimensional monolayer of carbon, is an essential building block for advanced electronic applications. Graphene is often integrated with bulk conductors, metals and semiconductors, for optoelectronic applications. The semimetal bismuth, that shares many electronic properties with these other conductors, is interesting because like graphene, it is a gapless conductor of high electronic mobility with linear dispersion relations and low electronic density. We studied the doping of graphene by Bi and the interfacial electric dipole.Graphene Raman spectroscopy results show that there is a very large charge transfer between graphene and bismuth. This doping is larger than in the interfaces of graphene with metals such as Cu and semiconductors such as Si. Our findings are in good agreement with recent theoretical results for graphene bismuth interfaces. We also present a demonstration of zerobias photocurrent generation that is enabled by the electric dipole at the graphene bismuth interface.

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Section: Resultsmentioning

confidence: 99%

Charge Transfer and Photocurrent in Interfacial Junctions between Bismuth and Graphene

et al. 2018

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“…Proximity effects have been studied by combining graphene with magnetic insulators, [14][15][16][17] or by magnifying the spin-orbit coupling (SOC) in graphene through extrinsic chemical functionalization. [18][19][20] Another route recently proposed is to interface graphene with transition metal dichalcogenides (TMDCs) 21,22 such as WS 2 or WSe 2 , which leads to phenomena such as weak antilocalization (WAL) [23][24][25] or large nonlocal Hall signals. 26 Additionally, the fact that electronic states in Gr/TMDC sys-tems are spin-polarized primarily along the outof-plane direction 27 results in large spin lifetime anisotropy between in-plane and out-ofplane spin-polarized electrons, which is however weakly energy dependent and therefore not tunable.…”

Section: Introductionmentioning

confidence: 99%

Spin Proximity Effects in Graphene/Topological Insulator Heterostructures

et al. 2018

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Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. To engineer practical spintronics applications with such graphene/topological insulator (Gr/TI) heterostructures, an understanding of the hybrid spin-dependent properties is essential. However, to date, despite the large number of experimental studies on Gr/TI heterostructures reporting a great variety of remarkable (spin) transport phenomena, little is known about the true nature of the spin texture of the interface states as well as their role on the measured properties. Here, we use ab initio simulations and tight-binding models to determine the precise spin texture of electronic states in graphene interfaced with a BiSe topological insulator. Our calculations predict the emergence of a giant spin lifetime anisotropy in the graphene layer, which should be a measurable hallmark of spin transport in Gr/TI heterostructures and suggest novel types of spin devices.

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“…7,8 Indeed, beyond the long room-temperature spin lifetime achieved experimentally, [9][10][11] evidences of spin transport modulation by proximity effects have been reported in heterostructures combining graphene with magnetic insulators, [12][13][14][15] or by enhancing spinorbit coupling (SOC) in graphene through the deposition of adatoms. [16][17][18] Another route is the deposition of graphene onto transition metal dichalcogenides (TMDCs), 19,20 where a considerable enhancement of SOC in graphene interfaced with WS 2 or WSe 2 has been unveiled by measuring weak antilocalization (WAL) effects. [21][22][23] Additionally, large spin Hall effect signals have been reported in graphene/WS 2 heterostructures, 24 suggesting that such interfaces could be suitable for the optimization of pure spin currents and the development of spin-torque technologies.…”

Section: Introductionmentioning

confidence: 99%

Spin Hall Effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures

2017

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We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS 2 system is found to maximize spin proximity effects compared to graphene on MoS 2 , WSe 2 , or MoSe 2 , with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications.

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Weak localization of bismuth cluster-decorated graphene and its spin–orbit interaction

Cited by 18 publications

References 43 publications

Charge Transfer and Photocurrent in Interfacial Junctions between Bismuth and Graphene

Charge Transfer and Photocurrent in Interfacial Junctions between Bismuth and Graphene

Spin Proximity Effects in Graphene/Topological Insulator Heterostructures

Spin Hall Effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures

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