Transport properties of Y 0.95 Ca 0.05 MnO 3 /Si thin film junction

The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure

“…Furthermore, in the reverse bias, the increment in the current with increase of the bias voltage or the non-saturation current across the YbFeO 3−δ /Si junction at a given MT can be due to the larger grain size and hence smaller grain boundary density in the YbFeO 3−δ layer. Since grain boundaries have highly resistive nature in the low resistive granular matrix [25,[45][46][47][48], the smaller grain boundary density results in the lower resistive nature of the device and hence higher leakage current across the device.…”

“…Some researchers [25,[44][45][46][47][48] have stated that the deviation from linearity in high current forward bias I -V curves or non-saturation reverse bias I -V curves in the ferroelectric material-based heterojunctions (HJs) indicate the existence of electro-resistance or the junction resistance behavior of HJ. The charge transport properties of the junctions can be more understood by means of electric field and temperature dependent junction resistance.…”

“…Deviations in device resistance in reverse-bias branch may be due to the disorder and inhomogeneity at the interface and ferrite layer, large number of grain boundaries and higher structural strain [25,26,[44][45][46][47][60][61][62][63][64][65][66]. The highly low leakage current behavior in the reverse branch indicate the quality of the Al/YbFeO 3−δ or YbFeO 3−δ /Si interface in the ferroelectric material based structures, which are desired for the practical applications in spintronics and memory devices [25,26,[44][45][46][47][60][61][62][63][64][65][66]. The presence of impurity phases, oxygen vacancies and high shunt resistance may generally cause the high leakage current.…”

“…Ferrites have grabbed attention due to their potential dielectric performance and it makes them good candidate materials for microwave devices, too [8][9][10][11][12][13][14][15][16][17][18][19][20]. It is known that the perovskite-oxide ferroelectric thin films are important materials in order to shrink memory devices and decrease electrical power [21][22][23][24][25][26][27][28][29][30][31][32]. Moreover, the orthoferrite perovskite materials are useful as interface layers to block the metal diffusion into the Si substrate.…”