Transport properties of the pseudo-binary alloy system Bi2Te3−ySey

Fuschillo, N.; Bierly, J.N.; Donahoe, F.J.

doi:10.1016/0022-3697(59)90382-8

Cited by 38 publications

(18 citation statements)

References 3 publications

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“…In practice, this effect has not yet been documented with a complete phase boundary mapping study . Similarly, the electron concentration of n‐type Bi 2 (Te,Se) 3 alloys can be controlled for Bi 2 Se 3 amounts higher than 33% . In this case the Bi‐rich conditions which will increase the donor Se vacancy defects will also promote the Bi Te acceptor defects.…”

Section: Structure and Chemistrymentioning

confidence: 99%

The Thermoelectric Properties of Bismuth Telluride

Witting

Chasapis

Ricci

et al. 2019

Adv Elect Materials

565

406

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Bismuth telluride is the working material for most Peltier cooling devices and thermoelectric generators. This is because Bi2Te3 (or more precisely its alloys with Sb2Te3 for p‐type and Bi2Se3 for n‐type material) has the highest thermoelectric figure of merit, zT, of any material around room temperature. Since thermoelectric technology will be greatly enhanced by improving Bi2Te3 or finding a superior material, this review aims to identify and quantify the key material properties that make Bi2Te3 such a good thermoelectric. The large zT can be traced to the high band degeneracy, low effective mass, high carrier mobility, and relatively low lattice thermal conductivity, which all contribute to its remarkably high thermoelectric quality factor. Using literature data augmented with newer results, these material parameters are quantified, giving clear insight into the tailoring of the electronic band structure of Bi2Te3 by alloying, or reducing thermal conductivity by nanostructuring. For example, this analysis clearly shows that the minority carrier excitation across the small bandgap significantly limits the thermoelectric performance of Bi2Te3, even at room temperature, showing that larger bandgap alloys are needed for higher temperature operation. Such effective material parameters can also be used for benchmarking future improvements in Bi2Te3 or new replacement materials.

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Section: Structure and Chemistrymentioning

confidence: 99%

The Thermoelectric Properties of Bismuth Telluride

Witting

Chasapis

Ricci

et al. 2019

Adv Elect Materials

565

406

View full text Add to dashboard Cite

show abstract

“…In conclusion, TM (D) C synthesis, which can show critical functions on the surface, is suitable for low temperature synthesis ALD process which can control defect rather than high temperature synthesis which defect control is impossible. Indeed, the perfect stoichiometric Bi2Te3 as a binary end compound is a representative example of TM(D)Cs that should be p-type [105] because of the low formation energy of anti-site defects, [106]. Like a number of TM(D)C materials, it is difficult to find the successful growth of intrinsic ptype Bi2Te3 in the literature because most of the system is prepared at high temperatures and Te vacancies are created easily.…”

Section: Defect Chemistry Of Tm(d)c and Its Implication On Low-tempermentioning

confidence: 99%

Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview

et al. 2019

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In the photoelectrochemical (PEC) water splitting (WS) reactions, a photon is absorbed by a semiconductor, generating electron-hole pairs which are transferred across the semiconductor/electrolyte interface to reduce or oxidize water into oxygen or hydrogen. Catalytic junctions are commonly combined with semiconductor absorbers, providing electrochemically active sites for charge transfer across the interface and increasing the surface band bending to improve the PEC performance. In this review, we focus on transition metal (di)chalcogenide [TM(D)C] catalysts in conjunction with silicon photoelectrode as Earth-abundant materials systems. Surprisingly, there is a limited number of reports in Si/TM(D)C for PEC WS in the literature. We provide almost a complete survey on both layered TMDC and non-layered transition metal dichalcogenides (TMC) co-catalysts on Si photoelectrodes, mainly photocathodes. The mechanisms of the photovoltaic power conversion of silicon devices are summarized with emphasis on the exact role of catalysts. Diverse approaches to the improved PEC performance and the proposed synergetic functions of catalysts on the underlying Si are reviewed. Atomic layer deposition of TM(D)C materials as a new methodology for directly growing them and its implication for low-temperature growth on defect chemistry are featured. The multi-phase TM(D)C overlayers on Si and the operation principles are highlighted. Finally, challenges and directions regarding future research for achieving the theoretical PEC performance of Si-based photoelectrodes are provided.

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“…The first synthesis of BTS was made while optimizing the continuous solid solutions between Bi 2 Te 3 and Bi 2 Se 3 for thermoelectric applications. 34 Nevertheless, unlike other members in the Bi 2 Te 3−x Se x (0<x<3) family, the Te and Se atoms in BTS occupy distinct crystallographic sites, forming quintuple layers arranged in the sequential order Te-Bi-Se-Bi-Te along the c axis. 35 Such chalcogen ordering is believed to provide structural basis for reducing bulk carriers and achieving high surface mobility.…”

Section: Introductionmentioning

confidence: 99%

Fermi level tuning and a large activation gap achieved in the topological insulator Bi2Te2Se by Sn doping

et al. 2012

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We report the effect of Sn doping on the transport properties of the topological insulator Bi 2 Te 2 Se studied in a series of Bi 2−x Sn x Te 2 Se crystals with 0 x 0.02. The undoped stoichiometric compound (x = 0) shows an n-type metallic behavior with its Fermi level pinned to the conduction band. In the doped compound, it is found that Sn acts as an acceptor and leads to a downshift of the Fermi level. For x 0.004, the Fermi level is lowered into the bulk forbidden gap and the crystals present a resistivity considerably larger than 1 cm at low temperatures. In those crystals, the high-temperature transport properties are essentially governed by thermally activated carriers whose activation energy is 95-125 meV, which probably signifies the formation of a Sn-related impurity band. In addition, the surface conductance directly obtained from the Shubnikov-de Haas oscillations indicates that a surface-dominated transport can be achieved in samples with several μm thickness.

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Transport properties of the pseudo-binary alloy system Bi2Te3−ySey

Cited by 38 publications

References 3 publications

The Thermoelectric Properties of Bismuth Telluride

The Thermoelectric Properties of Bismuth Telluride

Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview

Fermi level tuning and a large activation gap achieved in the topological insulator Bi2Te2Se by Sn doping

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