Transport properties of Sn-doped InSb thin films and applications to Hall element

Transport properties of InSb and InAs thin films on GaAs substrates

“…6. The mobility of the undoped InSb film has a peak around room temperature and has a very small value at 100 K, whereas the mobility of the uniformly doped film (0-1 mm) increases monotonically with decreasing temperature as discussed in previous papers [5,6]. This result could be explained by the two-layer model, according to which at temperatures below 200 K the electron density of the upper layer of the undoped InSb film is much smaller than that of the lower layer, so at low temperatures the mobility of the undoped film shows the mobility of the lower layer.…”

“…The n-type impurities we used in our previously reported work were Si in InAs and Sn in InSb [3][4][5][6][7]. Since the electron mobility of Sn-doped InSb thin films is a little higher than that of Si-doped ones [7] and the electron mobility of Sn-doped InAs thin films is a little higher than that of Si-doped ones, we used Sn as the n-type impurity in both InAs and InSb thin films.…”

“…This means that InSb thin film grown on GaAs (1 0 0) substrates have a three-layer structure with a heterointerface portion having low electron mobility, a middle portion having high electron mobility, and a surface portion having low electron mobility. In previous papers, surface portion was neglected for the consideration of electron transport phenomena [5,6]. However, this does not change the essence of the explanation of the electron transport phenomena in InSb thin films.…”

“…The temperature dependence of the electronic properties of InAs and InSb thin films grown directly on GaAs substrates has been reported to show anomalous behavior when those films have large lattice mismatches [3][4][5][6][7]. In those reports, the anomalous temperature dependence of the electron mobility of undoped InSb films at low temperature and the difference between the doped and undoped films was attributed to the very large mobility change in the thickness direction, from a low mobility near the InSb/GaAs heterointerface to a high mobility far from the heterointerface or in the middle portion of the thin film.…”

High accuracy magnetic field sensors with wide operation temperature range

“…A3B5 compound semiconductors offer an advanced performance due to high electron mobility, high electron density and thin film technology. Among them InAs and InSb thin film heterostructures are most attractive due to high doping level, providing the electron degeneracy and thus, low temperature drift [3,4]. However, the mechanical deformations due to the mismatch of the lattice constants of GaAs substrate and InAs or InSb make difficult to obtain high-quality InAs layers during epitaxial growth.…”