Transport properties of Mg2 X 0.4Sn0.6 solid solutions (X = Si, Ge) with p-type conductivity

Fedorov, M. I.; Zaĭtsev, V. K.; Eremin, I. S.; Gurieva, E. A.; Бурков, А. Т.; Константинов, П. П.; Vedernikov, Mikhail; Samunin, A. Yu.; Isachenko, G. N.; Shabaldin, A. A.

doi:10.1134/s1063783406080117

Cited by 46 publications

(18 citation statements)

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“…This is explained by the higher electrical conductivity of Mg 2 Sn compound compared to that of Mg 2 Si [1]. This result is consistent with results reported in [2] for p-type bulk Mg 2 Si 0.4 Sn 0.6 solid solution as well as for undoped Mg 2 Si 1Àx Sn x [4,7,9].…”

Section: Electrical Conductivitysupporting

confidence: 95%

“…These alloys exhibit many advantages such as the abundance and thus low price of their constituent elements, their low density, good stability as well as non-toxicity and environmental friendliness. Recently, solid solutions of Mg 2 Si-Mg 2 Sn in bulk state with the figure of merit (ZT) up to 1.1 for n-type and around 0.5 for p-type were reported by Zaitsev et al [2,3]. This result has resurged a great interest for these solid solutions and similar results were then obtained by other workers [4][5][6][7][8][9][10].…”

Section: Introductionsupporting

confidence: 79%

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Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

Le-Quoc¹,

Lacoste²,

Béchu³

et al. 2012

Journal of Alloys and Compounds

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Section: Electrical Conductivitysupporting

confidence: 95%

Section: Introductionsupporting

confidence: 79%

Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

Le-Quoc¹,

Lacoste²,

Béchu³

et al. 2012

Journal of Alloys and Compounds

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“…The Mg 2 (SiSn)-system solid solutions have been proposed as promising materials for high-performance thermoelectric generators in the temperature range of 500 to 800 K. [1][2][3][4][5][6][7] The constituent elements of the Mg 2 (SiSn)-system solid solutions are environmentally friendly, non-toxic, and abundantly available. Therefore, they are known as ecofriendly thermoelectric semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Performance of p-Type Mg2Si0.25Sn0.75 with Li and Ag Double Doping

Isoda¹,

Tada

Nagai

et al. 2010

Mater. Trans.

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The single-phase of p-type Mg 2 Si 0:25 Sn 0:75 with Li and Ag double doping were prepared by the liquid-solid reaction and hot-pressing methods. All samples thus obtained were identified by XRD as single-phase solid solutions with an anti-fluorite structure. The effects of Li and Ag double doping on thermoelectric performance were investigated at temperature differences (ÁT) of 0 to 500 K. The thermoelectromotive force (E) of the Li-25000 ppm single-doped sample was determined to be 88 mV at ÁT ¼ 500 K. For the Li-20000 ppm and Ag-5000 ppm double-doped sample, the E value became larger (92 mV) after Ag substitution. A maximum E value of 97 mV was obtained for the Ag-25000 ppm single-doped sample and the Li-5000 ppm and Ag-20000 ppm double-doped sample. Mean resistivity (r m ) at ÁT ¼ 500 K decreased by double doping and showed a minimum value of 2:94 Â 10 À5 m for the Li-5000 ppm and Ag-20000 ppm double-doped sample. The maximum effective power (P ¼ E 2 =4r m ) increased with ÁT. The P values of single-doped samples at ÁT ¼ 500 K were 38 Wm À1 for Li singledoped and 72 Wm À1 for Ag single-doped samples. P for the Li-20000 ppm and Ag-5000 ppm double-doped sample was 64 Wm À1 , which was an improvement of about 90% compared with the Li single-doped sample. The maximum value of P at ÁT ¼ 500 K was 80 Wm À1 for the Li-5000 ppm and Ag-20000 ppm double-doped sample, which was an improvement of about 10% compared with the Ag single-doped sample.

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“…They show much promise as high-performance thermoelectric generators in the temperature range from 400 K to 800 K. They are applied to utilize waste heat from industrial plants and exhaust gas of cars 1 . There are several reports on thermoelectric properties of Mg 2 Si 1-x Sn x system solid solutions [2][3][4][5][6] . However, thermoelectric properties of Mg 2 Si 0.5 Sn 0.5 have not been investigated thoroughly because the existence of a multiphase region makes it difficult to synthesize the single-phase Mg 2 Si 1-x Sn x solid solution in the composition range of 0.4 < x < 0.6 using conventional crystal growth techniques.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Na-doped Mg2Si0.25Sn0.75

Tada

Isoda

Udono

et al. 2013

Trans. Mat. Res. Soc. Japan

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We have investigated the thermoelectric properties of Na-doped Mg 2 Si 0.25 Sn 0.75 solid solutions prepared by liquid-solid reaction and hot-pressing methods.Na doping was carried out by mixing sodium acetate (CH 3 COONa) into the starting materials Mg (nominal purity: 99.9 %), Sn (99.999 %) granules, and Si powder (99.9999 %).The Na-doped samples had p-type conductivity with positive signs of Seebeck and Hall coefficients.Furthermore, hole concentrations increased rapidly with an increase in the amount of Na doping.These results revealed that the Na atoms acted as acceptors in Mg 2 Si 0.25 Sn 0.75 .The Seebeck coefficient of Na-doped samples showed positive values between 300 and 750 K.A maximum power factor of 0.88 × 10 -3 WmK -2 was observed for the Mg 2 Na 0.020 Si 0.25 Sn 0.75 sample at 500 K. The dimensionless figure of merit ZT reached 0.17 at 450 K for all Na-doped samples.

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Transport properties of Mg2 X 0.4Sn0.6 solid solutions (X = Si, Ge) with p-type conductivity

Cited by 46 publications

References 1 publication

Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

Thermoelectric Performance of p-Type Mg<SUB>2</SUB>Si<SUB>0.25</SUB>Sn<SUB>0.75</SUB> with Li and Ag Double Doping

Thermoelectric Properties of Na-doped Mg<sub>2</sub>Si<sub>0.25</sub>Sn<sub>0.75</sub>

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