Transport properties of low-resistance ohmic contacts to InP

Clausen, Thomas; Leistiko, Otto; Chorkendorff, Ib; Larsen, John Chr.

doi:10.1016/0040-6090(93)90012-e

Cited by 21 publications

(10 citation statements)

References 26 publications

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“…An essential difference from the model developed in earlier work (Ref. 4) is the consideration of the current flow paths through the regions accumulating electrons rather than depleted regions. By combining the two above-mentioned mechanisms we can explain the behavior of R c ðTÞ curves (decreasing with increasing temperature in a)…”

Section: Introductionmentioning

confidence: 94%

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Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors AIP Advances 2, 022113 (2012) All-metallic lateral spin valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy with a large spin signal Appl. Phys. Lett. 100, 052405 (2012) Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding Appl. Phys. Lett. 100, 053503 (2012) Ab initio quantum transport simulation of silicide-silicon contacts J. Appl. Phys. 111, 014305 (2012) Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions Appl. Phys. Lett. 99, 253504 (2011) Additional information on J. Appl. Phys. A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained.

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Section: Introductionmentioning

confidence: 94%

“…[1][2][3] The increase of contact resistance with temperature was also observed for ohmic contacts to p-and n-InP. 4 The authors of Ref. 5 studied the temperature dependencies of contact resistance of Pt-Si-n-Si as a function of Si doping level.…”

Section: Introductionmentioning

confidence: 96%

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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“…The following anomaly was registered: in the temperature range starting from the room temperature, the contact resistance increases with increasing temperature T. In particular, this temperature dependence of contact resistance was observed for Inn-GaP and In-n-GaN contacts [10,31]. The increase of contact resistance with temperature was also observed for ohmic contacts fabricated to p-and n-InP [32]. The experimental R c (T) curves obtained in the abovementioned papers are in contradiction with the thermionic mechanism of current flow, according to which R c has to decrease with temperature.…”

Section: Introductionmentioning

confidence: 62%

“…A qualitative explanation for the observed increase of contact resistance with temperature [32] was as follows: in semiconductors with a stepped doping (n-n + junction), the flowing current may be restricted by diffusion mechanism supplying the electrons. For this case, it was supposed that R c is proportional to T 2 .…”

Section: Introductionmentioning

confidence: 99%

http://journal-spqeo.org.ua

Sachenko¹,

Конакова²,

Belyaev³

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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“…The authors of Ref. 4 reported that the contact resistance of ohmic contacts (based on AuZn and AuGe alloys) to p-InP and n-InP, respectively, increases with temperature.…”

Section: Introductionmentioning

confidence: 99%

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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The temperature dependence of contact resistivity q c in lapped silicon specimens with donor concentrations of 5 Â 10 16 , 3 Â 10 17 , and 8 Â 10 17 cm À3 was studied experimentally. We found that, after decreasing part of the q c (T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. V C 2012 American Institute of Physics. [http://dx

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Transport properties of low-resistance ohmic contacts to InP

Cited by 21 publications

References 26 publications

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

http://journal-spqeo.org.ua

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

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