Transport properties of boron-doped single-walled silicon carbide nanotubes

Yang, Yingying; Ding, Ruixue; Song, Jiuxu

doi:10.1016/j.physb.2010.10.046

Cited by 40 publications

(12 citation statements)

References 15 publications

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“…The spin polarized current flowing in system can be obtained by integrating the transmission spectrum and is mathematically given by the following relation [1,[15][16][17]:…”

Section: Setup and Simulationmentioning

confidence: 99%

First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ CrO 2 -SiCNT-CrO 2 magnetic tunnel junction

Choudhary

Chauhan

2015

J Comput Electron

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We report the spin transport in silicon carbide nanotube based magnetic tunnel junction with half-metallicferromagnet CrO 2 as electrodes. The simulations based on first principles suggest high tunnel magnetoresistance ∼100 % at zero bias, TMR remains high at higher bias voltages. I-V characteristics show that spin current in parallel magnetic configuration is much higher than the spin current in anti-parallel configuration. Perfect spin-filtration effect is obtained for this structure. Transmission coefficients are also calculated to understand the spin and bias dependent nonequilibrium transport properties.

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“…The spin polarized current flowing in system can be obtained by integrating the transmission spectrum and is mathematically given by the following relation [1,[15][16][17]:…”

Section: Setup and Simulationmentioning

confidence: 99%

First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ CrO 2 -SiCNT-CrO 2 magnetic tunnel junction

Choudhary

Chauhan

2015

J Comput Electron

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“…The bias range for NDR changes when the nanotube is doped by boron. 81 A recent study 83 has shown that co-doping BN impurities in the silicon carbide nanotube suppress this important NDR property due to introduction of new electronic states near the Fermi level followed by weak orbital localization. The transport properties of SiCNT can be altered by attaching a molecule on the wall of the nanotube.…”

Section: Transport Properties Of Sicntsmentioning

confidence: 99%

Silicon Carbide Nanotubes: From Finite Single-Walled to Infinite Multi-Walled

Adhikari¹,

Ray²

2012

Jnl of Comp & Theo Nano

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A review of research of silicon carbide nanotubes from single-walled to multiwalled structure is presented. Electronic properties of silicon carbide nanotubes have very interesting characters due to the partial ionic nature of Si C bond. Many theoretical studies have shown that the silicon carbide nanotubes can be promising medium for hydrogen storage. The possibility of capping a silicon carbide nanotube by fullerene hemisphere cap provide further applications in field emission displays, chemical couriers and as liquid crystals. Also, the capping provides an insight into the possible synthesis pathways to single-walled and multi-walled silicon carbide nanotubes. Electronic and structural properties of double-walled silicon carbide in reviewed in detail. The possibility of metallic multiwalled silicon carbide nanotubes is also explored. The studies so far have not indicated any metallic behavior in multiwalled silicon carbide nanotubes.

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“…Choudhary et al have reported the doped boron (B) and nitrogen (N) atoms on the electronic transport properties of SiCNTs (13). Also, Yang et al (14) have studied the doped boron (B) atom on the transport properties of SiCNTs. Their results showed that that boron is a suitable impurity for fabricating nanoscale SiCNT electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Electronic and Structural Properties of Ga-Doped (4,4)armchairSiCNT as ap-Semiconductor

Baei

Hashemian

Torabi

et al. 2014

Fullerenes, Nanotubes and Carbon Nanostructures

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The properties of pristine and Ga-doped silicon carbide nanotubes (SiCNTs) in two models (Ga Si and Ga C ) as a p-semiconductor were investigated by density functional theory (DFT) calculations. The investigated structures were optimized, and quantum molecular descriptors and isotropic (CS I ) and anisotropic (CS A ) chemical shielding parameters were calculated for the optimized structures. We extended the DFT calculation to predict the electronic and structural properties of Ga-doped silicon carbide nanotubes, which are important for the production of solid-state devices and other applications. According to the calculations, the Ga Si model is a better p-semiconductor than the Ga C model in the production of solid-state devices.

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Transport properties of boron-doped single-walled silicon carbide nanotubes

Cited by 40 publications

References 15 publications

First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ CrO 2 -SiCNT-CrO 2 magnetic tunnel junction

First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ CrO 2 -SiCNT-CrO 2 magnetic tunnel junction

Silicon Carbide Nanotubes: From Finite Single-Walled to Infinite Multi-Walled

Electronic and Structural Properties of Ga-Doped (4,4)armchairSiCNT as ap-Semiconductor

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