Transport Properties of a Resistively-Coupled Single-Electron Transistor

Abstract

A resistively-coupled single-electron transistor (R-SET), whose gate was a tunnel resistor, was fabricated using a modulation-doped GaAs/AlGaAs heterostructure and metal Schottky gates. Observed current-voltage characteristics show the Coulomb diamonds which are predicted for an R-SET. This means that the tunnel resistor can be used as an R-SET gate.

Resistively coupled single-electron transistor using tunnel gate resistor

“…1 with the Coulombblockade regions. Although R-SETs have advantages of high-voltage gain and background-charge-free operation, C-SETs and C-SET-based devices have been intensively studied so far, while a few works [4][5][6] on R-SET can be found in the literature. The purpose of the present work is fabrication and characterization of the R-SET.…”