Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor

Tseng, Chien Fu; Tsai, Tsung Yen; Huang, Yen Hsiu; Lee, Ming-Tsang; Horng, Ray−Hua

doi:10.1016/j.jcrysgro.2015.09.003

Cited by 27 publications

(14 citation statements)

References 32 publications

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“…The marked thirty-seven wafers are tiled on the graphite disk, and labeled from 1 to 37 as shown in figure 1d. These wafers are categorized into three groups: Zone A (1)- (7), Zone B (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19), Zone C (20-37), also referred as the center zone, the middle zone and the outside zone, respectively. To simplify the modeling, the following hypotheses are made during the study.…”

Section: Geometry Descriptionmentioning

confidence: 99%

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Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Zheng

Fang

Zhang

et al. 2016

Crystal Research and Technology

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Three-dimensional models, coupling fluid flow and heat transfer, have been adopted to analyze influences of the process parameters on the temperature uniformity in an industrial MOCVD reactor. Important factors, such as the inlet gas flow, the susceptor rotation, the heater power, the distance between the heat shield and the susceptor (d 1 ), as well as the distance between the heater and the susceptor (d 2 ), have been investigated carefully. The system heating condition is characterized by temperature uniformity denoted as the standard deviation of temperature, and by thermal efficiency expressed as a combination parameter of the dissipated energy. The results reveal that decrease of the gas flow and the rotation rate, as well as increase of the distance d 1 , could monotonically enhance the temperature uniformity. The results also show that decrease of the above three parameters could improve the thermal efficiency. Furthermore, increase of the distance d 2 enhances the temperature uniformity, and reduces the thermal efficiency slightly. The influences of the parameters on the uniformity vary at the different locations of the susceptor as divided into Zone A, Zone B and Zone C. The conclusions help the growth engineer optimize the system design and process conditions of the reactor.

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Section: Geometry Descriptionmentioning

confidence: 99%

“…Lin et al [4] investigated numerically effect of an embedding porous medium on the deposition rate. Chemical reaction mechanism has also been analyzed as a hot topic [5][6][7][8]. Pawlowski et al [9] developed a fundamental reaction-transport model describing the MOCVD process of GaN.…”

Section: Introductionmentioning

confidence: 99%

Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Zheng

Fang

Zhang

et al. 2016

Crystal Research and Technology

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“…The conducted analysis showed that the reactor geometry is of crucial importance to the high uniformity of thin-film layer deposition. Subsequent studies focused on specific apparatus constructions from small laboratory size solutions, suitable for processing 3 in wafers [17,[20][21][22][23][24][25] up to big, rotating disk or planetary constructions designed for more than 40 2-in substrates [15,[26][27][28][29][30]. The researchers investigated the geometry and shape of reactor chambers [15,25,27] with special emphasis placed on the distance between the inlet and the susceptor, the gas injection systems [22,26,31,32] responsible for proper chemical species delivery, as well as the operating parameters of the growth process [15,16,29,33].…”

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

et al. 2021

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The present paper focuses on the high-pressure metal-organic vapor phase epitaxy (MOVPE) upside-down vertical reactor (where the inlet of cold gases is below a hot susceptor). This study aims to investigate thermo-kinetic phenomena taking place during the GaN (gallium nitride) growth process using trimethylgallium and ammonia at a pressure of above 2 bar. High pressure accelerates the growth process, but it results in poor thickness and quality in the obtained layers; hence, understanding the factors influencing non-uniformity is crucial. The present investigations have been conducted with the aid of ANSYS Fluent finite volume method commercial software. The obtained results confirm the possibility of increasing the growth rate by more than six times through increasing the pressure from 0.5 bar to 2.5 bar. The analysis shows which zones vortexes form in. Special attention should be paid to the transitional flow within the growth zone as well as the viewport. Furthermore, the normal reactor design cannot be used under the considered conditions, even for the lower pressure value of 0.5 bar, due to high turbulences.

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“…In addition, Theodoropoulos and others investigated the chemical mechanism model [20,21] to study the reaction chamber and coupled field, and proposed a model for the influence of different process parameters on the deposition rate under different conditions. With the improvement of GaN-MOCVD growth mechanism models, scholars such as Mitrovic studied the influence of different process parameters on deposition rate and optimized the design of reaction chambers [22][23][24][25][26][27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Fei

et al. 2018

R. Soc. open sci.

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Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

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Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor

Cited by 27 publications

References 32 publications

Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

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