1994
DOI: 10.1103/physrevb.49.10851
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Transport near the metal-insulator transition: Polypyrrole doped withPF6

Abstract: Heavily doped polypyrrole-hexafluorophosphate, PPy(PF6), undergoes a metal-insulator (M-I) transition at resistivity ratio p, = p(1.4 K)/p"(300 K) = The effect of the partially screened Coulomb interaction is substantial at low temperatures for samples on both sides of the M-I transition. In the insulating regime, the crossover from Mott variable-range hopping (VRH) to Efros-Shklovskii hopping is observed. In the metallic regime, the sign of the temperature coeScient of 0 the resistivity changes at p, =2. At T… Show more

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Cited by 174 publications
(79 citation statements)
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“…The polymerization was carried out at -40 0 C under nitrogen atmosphere to improve the structural order in the system, and the samples were systematically dedoped to attain the desired doping level. 12,13 Free-standing films (thickness ∼ 20 microns) were used for conductivity measurements; and the films on glass substrate, on which Au-contacts were evaporated before deposition, were used for electrochemical gated transistor (EGT) experiments. In the EGT measurements on PPV and PPy the hole charge was counterbalanced by PF − 6 anions from the electrolyte solution.…”
Section: Methodsmentioning
confidence: 99%
“…The polymerization was carried out at -40 0 C under nitrogen atmosphere to improve the structural order in the system, and the samples were systematically dedoped to attain the desired doping level. 12,13 Free-standing films (thickness ∼ 20 microns) were used for conductivity measurements; and the films on glass substrate, on which Au-contacts were evaporated before deposition, were used for electrochemical gated transistor (EGT) experiments. In the EGT measurements on PPV and PPy the hole charge was counterbalanced by PF − 6 anions from the electrolyte solution.…”
Section: Methodsmentioning
confidence: 99%
“…3(b), clearly showing a nonmetallic transport behavior ‫ץ͑‬ / ‫ץ‬T Ͻ 0͒ down to 4 K. This type of conduction behavior has been observed in a wide variety of disordered materials, in which the resistance curves were fitted to a variable range hopping (VRH) model. [14][15][16][17][18][19] The R / T curve of Fig. 3(b) was indeed successfully fitted to a three-dimensional (3D) VRH model, described in Eq.…”
Section: A the Fib Contact Contribution To The Measured Resistancementioning
confidence: 99%
“…In fact, it is only in a limited number of cases (for example, free-standing thick films of semiconducting polymers such as polyaniline (for example, refs 11 and 12) or polypyrrole (for example, ref. 13)) that chemical doping can delocalize carrier wavefunctions to the point of inducing an insulator-metal transition to a state with finite conductivity as T-0, or even entering the weakly localized regime beyond it 12,13 . It is currently unclear whether a metallic state is possible only in certain semiconducting polymers, or whether efficacy of chemical doping, or minimization of disorder, limit delocalization of the charge carriers.…”
mentioning
confidence: 99%