Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam

Marzi, Gianluca De; Iacopino, Daniela; Quinn, Aidan J.; Redmond, Gareth

doi:10.1063/1.1779972

Cited by 106 publications

(88 citation statements)

References 35 publications

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“…The NWs of Pt, Au, and Cu were shown to have resistivities as high as 3, 7, 26 times of the corresponding bulk metal, respectively. [10,11,25] Twoand four-probe transport measurements on Au and Pt NWs made by axial solution growth [26][27][28] displayed resistivities from 10 [28] to as high as 100 times [26,27] higher than the bulk. These observations raise several basic questions related to nanoscale interconnects.…”

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confidence: 98%

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

et al. 2010

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The electronics industry has consistently decreased the dimensions of structural components and they are now well into the nanoscale range. Naturally, a significant portion of the chip is composed of interconnects. Besides, the engineering problems associated with short wavelength lithography to achieve smaller components, the performance of increasing number of interconnections has become one of the biggest limiting factors in device performance.[1,2] The power loss, signal degradation, interconnection delays, and other performance limitations related to interconnects should be minimized. The importance of such a task can be seen from the perspective of power dissipation by computation elements. The energy dissipation density in electronic chips approaches that in nuclear reactors. [3,4]

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confidence: 98%

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

et al. 2010

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“…This is very low for nanowire devices. [27] Control electrical measurements were also undertaken in the absence of nanowires, yielding very low currents and high resistances (~10 GΩ), typical of an open circuit. This confirmed that the observed Ohmic behaviour of the nanowire electrodes was exclusively due to the nanowire electrodes and associated on-chip metallisation interconnections with no contribution from the underlying silicon substrate.…”

Section: Nanowire Electrical Characterisationmentioning

confidence: 99%

Electroanalysis at discrete arrays of gold nanowire electrodes

Dawson

Baudequin

Sassiat

et al. 2013

Electrochimica Acta

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“…[8] Recently, direct writing techniques using focused ion beams (FIBs) have been used to form interconnects to individual nanowires. [9][10][11][12][13] To do this, an organoplatinum precursor gas flow was directed at the surface of the sample while the target region was irradiated with an energetic particle beam, which decomposed the gas and deposited Pt over the irradiated region. Decomposition of the precursor and Pt deposition can be achieved using focused beams of ions (IBID-Pt, where IBID = ion-beaminduced deposition) [9,10,12,13] or electrons (EBID-Pt, where EBID = electron-beam-induced deposition).…”

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Microstructure and Composition of Focused‐Ion‐Beam‐Deposited Pt Contacts to GaN Nanowires

2005

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GaN is a technologically important semiconductor with a wide direct bandgap (3.39 eV), and boasts strong light emission in the blue and UV regions of the electromagnetic spectrum. It finds extensive commercial applications in lasers and light-emitting diodes.[1] Because of its high melting temperature, high breakdown field, and high saturation drift velocity, it is a prime candidate for high-temperature, high-voltage, and high-power optoelectronic-device applications. In recent years, research interest in GaN nanowires has increased significantly because, for sufficiently thin nanowires, quantumconfinement effects may be observed, [2] which may lead to novel behavior and applications. GaN nanowires appear to be especially attractive as low-dimensional high-power blue and UV laser light sources, because it is anticipated that high optical gains and low lasing thresholds will be achievable when the nanowire diameter is smaller than the exciton radius. [3] It has been demonstrated that GaN nanowires possess great potential for photonic-, optoelectronic-, and electronic-device applications. [4][5][6][7] For practical device applications, nanowires have to be controllably assembled, precisely located, and individually contacted in order to build device architectures. This continues to be a formidable technical challenge. Traditional lithographic approaches are hindered by the need to register contacts to individual nanowires, although new methodologies to circumvent this limitation have been proposed. [8] Recently, direct writing techniques using focused ion beams (FIBs) have been used to form interconnects to individual nanowires. [9][10][11][12][13] To do this, an organoplatinum precursor gas flow was directed at the surface of the sample while the target region was irradiated with an energetic particle beam, which decomposed the gas and deposited Pt over the irradiated region. Decomposition of the precursor and Pt deposition can be achieved using focused beams of ions (IBID-Pt, where IBID = ion-beaminduced deposition) [9,10,12,13] or electrons (EBID-Pt, where EBID = electron-beam-induced deposition).[11] The unusually low resistance or ohmic contacts on n-type GaN nanowires [9] suggest that IBID-Pt contacts are different from conventional thin-film Pt contacts, which generally exhibit a large Schottky barrier on n-GaN. Here we present a complete investigation of the structural and chemical character of FIB-deposited metal contacts on GaN nanowires, in order to understand how composition and microstructure affect the electrical performance. Contact structures have been traditionally studied using cross-sectional transmission electron microscopy (TEM). TEM enables imaging, diffraction, and spectroscopy at nearatomic spatial resolution on the same region of interest, providing a wealth of morphological, structural, and compositional information, so that even the most complex contact structures can be readily understood. [14,15] Although many preparation techniques are capable of creating cross-sections suitable for TE...

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Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam

Cited by 106 publications

References 35 publications

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

Electroanalysis at discrete arrays of gold nanowire electrodes

Microstructure and Composition of Focused‐Ion‐Beam‐Deposited Pt Contacts to GaN Nanowires

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